改进低阻硅无源电路Q因数和损耗的新技术方案

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196683

K. Grenier, F. Bouchriha, D. Dubuc, P. Pons, J. Graffeuil, R. Plana

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引用次数: 3

摘要

本文提出了一种基于表面微加工的共面槽填充厚有机介电层的新技术方案。该技术使在低电阻硅衬底上实现的无源电路的Q因子和损耗都得到了改善。它确实允许实现更好的衰减水平，而不会显著降低有效介电常数。

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Novel technological solution to improve both Q factor and losses of passive circuits on low resistivity silicon

This paper deals with a novel technological solution based on the use of surface micromachining in coplanar slots that are filled with a thick organic dielectric layer. This technique enables both Q factor and losses improvements of passive circuits realized on low resistivity silicon substrate. It permits indeed to achieve much better attenuation level without an important decrease of the effective permittivity.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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