一种混合制造的40 GHz低相位噪声SiGe推推振荡器

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196672

R. Wanner, G. Olbrich

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引用次数: 11

摘要

提出了一种基于SiGe hbt的40 GHz推推振荡器。该电路采用薄膜技术在氧化铝衬底上制造。它在40 GHz时提供-9 dBm的输出功率，在20 GHz的基频下提供两个各-6 dBm的差分输出。该振荡器具有良好的相位噪声性能，在40 GHz的次谐波频率下达到-108 dBc/Hz，在20 GHz的基频下达到-114 dBc/Hz，两个值都是在1 MHz的失调频率下测量的。

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A hybrid fabricated 40 GHz low phase noise SiGe push-push oscillator

We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of I MHz.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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