{"title":"在硅上制造的RF-MEMS滤波器:本体声波技术的关键事实","authors":"R. Aigner","doi":"10.1109/SMIC.2003.1196694","DOIUrl":null,"url":null,"abstract":"The working principle and performance of state-of-the-art Bulk-Acoustic-Wave (BAW) devices is reviewed. The importance for RF-filters in mobile phone applications is discussed and the benefit of silicon-based technologies highlighted. Challenges in manufacturing of BAWs are briefly reviewed. The most important performance parameters such as resonator bandwidth and Q-values - and their dependency on processing and design are described. Whether monolithic integration \"System-On-Chip\" together with RFICs or hybrid integration \"System-In-Package\" makes more sense is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"200 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"RF-MEMS filters manufactured on silicon: key facts about bulk-acoustic-wave technology\",\"authors\":\"R. Aigner\",\"doi\":\"10.1109/SMIC.2003.1196694\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The working principle and performance of state-of-the-art Bulk-Acoustic-Wave (BAW) devices is reviewed. The importance for RF-filters in mobile phone applications is discussed and the benefit of silicon-based technologies highlighted. Challenges in manufacturing of BAWs are briefly reviewed. The most important performance parameters such as resonator bandwidth and Q-values - and their dependency on processing and design are described. Whether monolithic integration \\\"System-On-Chip\\\" together with RFICs or hybrid integration \\\"System-In-Package\\\" makes more sense is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.\",\"PeriodicalId\":332696,\"journal\":{\"name\":\"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.\",\"volume\":\"200 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2003.1196694\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2003.1196694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF-MEMS filters manufactured on silicon: key facts about bulk-acoustic-wave technology
The working principle and performance of state-of-the-art Bulk-Acoustic-Wave (BAW) devices is reviewed. The importance for RF-filters in mobile phone applications is discussed and the benefit of silicon-based technologies highlighted. Challenges in manufacturing of BAWs are briefly reviewed. The most important performance parameters such as resonator bandwidth and Q-values - and their dependency on processing and design are described. Whether monolithic integration "System-On-Chip" together with RFICs or hybrid integration "System-In-Package" makes more sense is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.