51st Annual Device Research Conference最新文献

{"title":"AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO/sub 2/ and polycrystalline GaAs in the extrinsic base and collector","authors":"K. Mochizuki, T. Nakamura, T. Tanoue, H. Masuda, M. Horiuchi","doi":"10.1109/DRC.1993.1009596","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009596","url":null,"abstract":"Summary form only given. A novel AlGaAs/GaAs HBT (heterojunction bipolar transistor) structure with buried SiO/sub 2/ and polycrystalline GaAs (poly-GaAs) in the extrinsic base and collector is presented. The lower dielectric constant of SiO/sub 2/ and complete carrier depletion of n-type poly-GaAs have reduced the extrinsic component of C/sub BC/ (base-collector capacitance) to 30% while f/sub T/ has been kept high by a thin intrinsic collector. By using newly developed low-resistance p-type poly-GaAs for the base electrode, further reduction in C/sub BC/ is expected with a one-dimensional transistor structure, such as SICOS. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131508586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Base thickness and high frequency performance of SiGe HBTs","authors":"A. Gruhle, H. Kibbel, U. Erben, E. Kasper","doi":"10.1109/DRC.1993.1009563","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009563","url":null,"abstract":"Summary form only given. The influence of the base thickness on the high-frequency performance of about 20 fabricated HBTs (heterojunction bipolar transistors) has been analyzed by plotting the highest obtained f/sub T/ value against base thickness. Base thickness is defined as the distance between the two Si/SiGe interfaces which usually coincide with the metallurgical pn-junctions. A steady increase of f/sub T/ with decreasing base thickness can be clearly seen: starting from the first published HBTs with 50 nm base thickness which did not exceed 20 GHz, transistors with 40 nm base had 37-52 GHz and devices with 28-30 nm bases exhibited 58-91 GHz. The latest two samples had only 25 and 22 nm base thicknesses, leading to an f/sub T/ of 95 GHz (f/sub max/=50 GHz), the highest value reported for Si transistors. The base doping in the latter sample was 8*10/sup 19/ cm/sup -3/ to maintain a base sheet resistance of about 1.2 k Omega . >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127242387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First direct beta measurenent for parasitic lateral bipolar transistors in fully-depleted SOI MOSFETs","authors":"E. V. Ploeg, C. T. Nguyen, N. Kistler, S. Wong, J. Woo, J. Plummer","doi":"10.1109/DRC.1993.1009566","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009566","url":null,"abstract":"Summary form only given. Direct measurements of beta values in SOI (silicon-on-insulator) MOSFETs biased in normal operating regimes are presented. The measurements were made on an SOI structure that allows for the efficient collection of the hole current after it has entered the source region and caused the bipolar back-injection of electrons. By measuring the drain and substrate currents and making extrapolated estimates of the intrinsic MOS channel current, it is possible to calculate values of the gain of the parasitic bipolar device for any bias condition. The V/sub GS/=V/sub T/ case is of greatest interest, because the drain-to-source breakdown voltage is generally smallest for this value of gate potential. beta was found to be highly dependent on the value of V/sub D/, with beta falling dramatically with increasing V/sub D/. As V/sub D/ is increased from 2.5 V to 4.5 V, with V/sub GS/-V/sub T/ held at 0 V, beta falls from about 1000 to 20 for an L=1.3 mu m, T/sub SOI/=1000 AA device. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114605145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Curved and tapered waveguide mode-locked InGaAs/AlGaAs semiconductor lasers fabricated by impurity induced disordering","authors":"R. Helkey, W. Zou, A. Mar, D. Young, J. Bowers","doi":"10.1109/DRC.1993.1009573","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009573","url":null,"abstract":"Summary form only given. Modelocking using curved waveguide devices for low facet reflectivity and using tapered waveguide devices for high output power has been demonstrated. Strong suppression of reflection-seeded secondary pulses was observed for curved waveguides, and increased output power for tapered waveguides. InGaAs/AlGaAs quantum-well semiconductor diode lasers were fabricated using impurity induced disordering. The waveguide has a linear taper from 2.5 mu m to 7.5 mu m width over a 150 mu m distance. The modelocked output pulse energy was increased to 4.1 pJ, compared to 1.8 pJ for a similar 2.5 mu m waveguide untapered device. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114841840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstrating the potential of 6h-silicon carbide for power devices","authors":"J. Palmour, J. Edmond, C. Carter","doi":"10.1109/DRC.1993.1009604","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009604","url":null,"abstract":"Summary form only given. Discusses the first vertical UMOS power MOSFETs ever reported in SiC, shows the highest gain 6H-SiC BJTs (bipolar junction transistors) and thyristors ever reported, and demonstrate the high-temperature operation of these devices. Vertical power MOSFETs fabricated in 6H-SiC with a UMOS design have specific on-resistances as low as 38 m Omega -cm/sup 2/ at a gate bias of +12 V. These devices can have current densities as high as 190 A/cm/sup 2/ (0.32 A/cm of gate periphery) and can dissipate a maximum power density of 5.4 kW/cm/sup 2/. SiC BJTs have been demonstrated up to 400 degrees C. The device structure used a reactive ion etched emitter with sintered Ni contacts to both the emitter and collector, and Al/Ti alloy contacts to the base. Four-layer structures have also been demonstrated in 6H-SiC, with p-n-p-n thyristors showing 100 V operation. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117005219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1D to 1D tunneling in a dual electron waveguide device","authors":"C. Eugster, J. D. del Alamo, M. Melloch, M. Rooks","doi":"10.1109/DRC.1993.1009613","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009613","url":null,"abstract":"Summary form only given. The authors report the first unambiguous observation of controlled electron tunneling between two closely spaced 1D electron waveguides. This represents a significant step toward the realization of a quantum field-effect electron directional coupler (QFED). The authors have fabricated a variety of dual electron waveguide devices with different lengths and widths on an AlGaAs/GaAs heterostructure (N/sub s/=4*0/sup 11/ cm/sup -2/ and mu =1.2*10/sup 6/ cm/sup 2//V-s at 4 K). The key feature in these devices is the 30-nm-wide middle gate fabricated using a single-pass e-beam lithography technique. Such a thin gate is required to achieve significant tunneling. A 1D to 1D regime is established when two electron waveguides are implemented. The tunneling current should be sensitive to the alignment of the subbands in the two electron waveguides. In this regime, bumps in the tunneling current are observed as a function of both side-gate voltages as the individual subbands line up between the two waveguides. This is unmistakable proof that 1D to 1D tunneling is taking place. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115054625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GaInAsAnP composite channel HEMTs","authors":"M. Matioubian, L.M. Jellolan, M. Lul, T. Liu, L. Larson, L. Nguyen, M. Le","doi":"10.1109/DRC.1993.1009580","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009580","url":null,"abstract":"GalnAs/AllnAs on InP HEMTs have demonstrated great potential for microwave and millimeter wave power applications [1,2]. By using Al,lnl-,As Schottky layer with x>0.48 we have been able to improve the gate-to-drain breakdown voltage of these HEMTs. But the remaining drawback has been their low value of the drain-to-source breakdown voltage due to the low breakdown field of the Ga0.47ln0.53As channel. Using InP as the channel material should improve the drain-to-source breakdown voltage, but due to the difficulty in achieving very low contact resis?ances-as well as the higher fields necessary to achieve velocity saturation-InP channel HEMTs have a higher knee voltage in their current-voltage characteristics and lower fT's than typical Gao.47lno.53As channel HEMTs. By using a combination of a thin layer of GalnAs and InP as the channel material it is theoretically possible to use the advantages of both materials [3]. Previously reported composite channel structures did not demonstrate any improvement in the drain-to-source breakdown voltage, probably due to the limitation of the gate-to-drain breakdown voltage of the devices. In this study we have combined AIo.60h0.40As Schottky layers with GalnAsAnP composite channels. We investigated the effect of changing the thickness of the Ga0.471n0.53As channel on the DC and RF characteristics of the HEMTs. The wafers were grown using a Varian Gen I I gas-source MBE on InP substrates. The channel consisted of a 100 A InP layer doped 2X1018cm-3, followed by a 50 A undoped InP layer. The Ga0.47ln0.53As channel thicknesses were varied between the three wafers grown and they were 100 A, 50 A, and 30 A for wafers A, 6, and C respectively. A 250 A Alo.6oino.40As undoped layer was used as the Schottky layer. HEMTs with gate-length of 0.15 pm, drain-to-source spacing of 2 pm, and total gate-widths ranging from 50 to 900 pm were fabricated on these three wafers. Preliminary measured results on the wafers are very encouraging. The maximum transconductance (measured at Vds=l.5 V) for wafers A, 6, and C, were 795, 71 1, and 613 mS/mm. Wafers A, 6, and C, had full channel currents of 733, 747, and 560 mA/mm, and drain-to-source breakdown voltages of 6.8, 8.3, and 10.6 V respectively. The knee voltage on all the wafers were comparable to Ga0.471n0.53As channel HEMTs. Based on the full channel currents and the breakdown voltages, power densities of 480, 627, and 633 mW/mm can be calculated for wafers A, B, and C. The preliminary results indicate that GalnA$/lnP composite channel HEMTs with a Gao.47lno.53As channel thickness of 50 A or less show improvement in the drain-to-source breakdown voltage without sacrificing performance.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122895474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vertical cavity surface emitting lasers with 14GHz bandwidth","authors":"P. Brusenbach, T. Uchida, C. Parsons, M. Kim, W. Quinn, S. Swirhun","doi":"10.1109/DRC.1993.1009635","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009635","url":null,"abstract":"The possibility of high speed operation is one of the most attractive features of vertical cavity surface emitting lasers (VCSELs). This arises from the small size and high photon density of the cavity. However, while relaxation oscillations at frequencies as high as 70 GHz [l] have been reported, the highest measured modulation bandwidth is in the 5-8 GHz range [2]. The low bandwidth is attributed to large parasitics of the VCSEL and specifically to the high resistance of the p-type mirror. We have investigated small diameter VCSELs and have observed a maximum bandwidth of 14 GHz. In this study, gain-guided VCSELs from two wafers were used, nominally lasing at either 780 nm or 960 nm. The epitaxial structure consisted of a bottom Si-doped mirror, a cavity region, and a top C-doped mirror. The mirrors consisted of quarterwavelength layers of AIAs/A10.3Ga0.7As or AIAs/GaAs for the 780 nm and 960 nm lasers, respectively. The active region of the 780 nm VCSEL was bulk A10,15Ga0.85As while the active region of the 960 nm wafer had three GaAs/ln0,2Ga0.gAs quantum wells. The structures were grown by MBE on 3” diameter n-type GaAs substrates and fabricated by completely planar technology. Threshold currents were 4-6 mA for laser diameters of 6-10 pm and the cw peak powers exceeded 0.4 mW. Modulation experiments showed a very high frequency-square root of power coefficient D=10 GHz/mW1/2. The maximum bandwidth of 13.7 GHz was reached at 20OC (and 14.7 GHz at 7OC) at a current of 8 mA for the 780 nm laser with a cavity diameter of 6 pm. The cavity region of these lasers received both a broad area proton implant as well as a second deep implant centered at the active region to better define the cavity diameter. The 960 nm lasers received only the first broad area implant and their measured response of 10 GHz indicates the importance of minimizing lateral carrier diffusion. Fitting of the response curves yields a damping rate r of more than 10 GHz, indicating an intrinsic response fmax greater than 50 GHz. The S-parameter data can be fitted to high accuracy with a realistic equivalent circuit.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128503687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"OMCVD grown AlInAs/GaInAs HEMT's with AlGaInP schottky layer","authors":"K.B. Chough, W. Hong, C. Caneau, J. Song, J. Hayes","doi":"10.1109/DRC.1993.1009578","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009578","url":null,"abstract":"The quality of undoped AlInAs is a key factor determining device performance of AllnAslGaInAs HEMT's. Recently the high background doping level of undoped AIMS grown by OMCVD has been a serious issue because it limits device performance of OMCVD grown AlInAs/GaInAs HEMT's. Very recently, the G ~ , L ~ I ~ P ternary material has attracted considerable interest as an alternative Schottky layer due to its wide band gap and absence of deep trap (e.g. DX centers) compared with AllnAs [1,2]. Furthermore, by adopting G a W as a Schottky layer, very uniform pinch-off voltage can be achieved using selective wet etching. However, the reported performance of LnGaAs HEMT's with GaInP Schottky layer are very poor. In this work, we have systematically investigated the device characteristics of AlMs/GaInAs HEMTs with (AI,Ga~,,)yIn~-yP as the Schottky layer.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133212357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Base recombination in high performance InGaAs/InP HBTs","authors":"C. Seabury, C.W. FarIey, B. Mcdermott, J. Higgins, C. Lin, P. Kirchner, J. Woodall, R. Gee","doi":"10.1109/DRC.1993.1009594","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009594","url":null,"abstract":"MOCVD2f3, and with C, using gas source MBE4, in the range of 5x1Ol8 to 8 ~ 1 0 ~ ~ . Large area devices were measured at 2KA/cm2, where DC gain is saturated. Single hets, and double hets with graded base collector junctions, were compared, and various base-emitter doping setbacks were used to insure that neither emission nor collection efficiency influenced the results. For Zn and Be doped devices with the same base thickness, a log-log plot of DC gain( HFE) vs base sheet resistance (ro in R/sq) gives a line with a slope of 2. The trend is similar for C. Base emitter turn on voltages and ideality varied only slightly, indicating bulk recombination, not emitter efficiency, dominates gain. If we attribute this square law behavior to a CHHS Auger process, the estimated recombination constant ( 4'10-29 cm6/s) is actually slightly smaller than the optically derived value.5 Since all of our devices had Wb>500A where diffusive .transport. is expected6, HFE/(P'Wb )2 or equivalently HFE/ro2f appears to be a material related constant.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130596054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}