通过在外源基极和集电极中埋入SiO/ sub2 /和多晶GaAs，降低了基极集电极电容的AlGaAs/GaAs HBTs

51st Annual Device Research Conference Pub Date : 1993-06-21 DOI:10.1109/DRC.1993.1009596

K. Mochizuki, T. Nakamura, T. Tanoue, H. Masuda, M. Horiuchi

{"title":"通过在外源基极和集电极中埋入SiO/ sub2 /和多晶GaAs，降低了基极集电极电容的AlGaAs/GaAs HBTs","authors":"K. Mochizuki, T. Nakamura, T. Tanoue, H. Masuda, M. Horiuchi","doi":"10.1109/DRC.1993.1009596","DOIUrl":null,"url":null,"abstract":"Summary form only given. A novel AlGaAs/GaAs HBT (heterojunction bipolar transistor) structure with buried SiO/sub 2/ and polycrystalline GaAs (poly-GaAs) in the extrinsic base and collector is presented. The lower dielectric constant of SiO/sub 2/ and complete carrier depletion of n-type poly-GaAs have reduced the extrinsic component of C/sub BC/ (base-collector capacitance) to 30% while f/sub T/ has been kept high by a thin intrinsic collector. By using newly developed low-resistance p-type poly-GaAs for the base electrode, further reduction in C/sub BC/ is expected with a one-dimensional transistor structure, such as SICOS. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO/sub 2/ and polycrystalline GaAs in the extrinsic base and collector\",\"authors\":\"K. Mochizuki, T. Nakamura, T. Tanoue, H. Masuda, M. Horiuchi\",\"doi\":\"10.1109/DRC.1993.1009596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. A novel AlGaAs/GaAs HBT (heterojunction bipolar transistor) structure with buried SiO/sub 2/ and polycrystalline GaAs (poly-GaAs) in the extrinsic base and collector is presented. The lower dielectric constant of SiO/sub 2/ and complete carrier depletion of n-type poly-GaAs have reduced the extrinsic component of C/sub BC/ (base-collector capacitance) to 30% while f/sub T/ has been kept high by a thin intrinsic collector. By using newly developed low-resistance p-type poly-GaAs for the base electrode, further reduction in C/sub BC/ is expected with a one-dimensional transistor structure, such as SICOS. >\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

只提供摘要形式。提出了一种新的AlGaAs/GaAs异质结双极晶体管(HBT)结构，其外源基极和集电极中埋入SiO/sub /和多晶GaAs (poly-GaAs)。SiO/sub 2/较低的介电常数和n型多砷化镓的完全载流子耗尽使C/sub BC/(基集电极电容)的外在分量降低到30%，而薄本征集电极使f/sub T/保持在较高的水平。通过使用新开发的低电阻p型聚砷化镓作为基电极，在SICOS等一维晶体管结构下，有望进一步降低C/sub BC/。>

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AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO/sub 2/ and polycrystalline GaAs in the extrinsic base and collector

Summary form only given. A novel AlGaAs/GaAs HBT (heterojunction bipolar transistor) structure with buried SiO/sub 2/ and polycrystalline GaAs (poly-GaAs) in the extrinsic base and collector is presented. The lower dielectric constant of SiO/sub 2/ and complete carrier depletion of n-type poly-GaAs have reduced the extrinsic component of C/sub BC/ (base-collector capacitance) to 30% while f/sub T/ has been kept high by a thin intrinsic collector. By using newly developed low-resistance p-type poly-GaAs for the base electrode, further reduction in C/sub BC/ is expected with a one-dimensional transistor structure, such as SICOS. >

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51st Annual Device Research Conference

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