51st Annual Device Research Conference最新文献

{"title":"Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes","authors":"K. Huang, K. Tai, C.C. Wu, J. Wynn","doi":"10.1109/DRC.1993.1009633","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009633","url":null,"abstract":"Summary form only given. Vertical-cavity surface-emitting lasers in the 0.66 mu m visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In/sub 0.5/Ga/sub 0.5/P (80 AA)/In/sub 0.5/Al/sub 0.5/GaP (60AA) quantum wells as the active medium. The quantum wells are located in the middle of a one lambda -thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, I/sub th/, are 3.9 and 4.6 mA at -75 and -25 degrees C, respectively, for 15 mu m diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I/sub th/ of 12 mA at 25 degrees C. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130471704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Uitra-low on-resistance p-channel lateral DMOS fabricated on [110]-oriented Si substrate","authors":"K. Throngnumchai","doi":"10.1109/DRC.1993.1009608","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009608","url":null,"abstract":"This paper presents a p-channel lateral DMOS (LDMOS) featuring improved onresistance through the use of a (1 10)-oriented Si substrate. The specific on-resistance of this LDMOS is believed to be the lowest among p-channel power MOSFETs reported to date. P-channel power MOSFETs are still widely used in such applications as high-side switching and complementary circuits even though their on-resistance, Ron, is about three times higher than that of n-channel devices having the same chip-size. While there is a need to reduce the Ron value of these devices, conventional (100)-substrates do not have a suitable orientation for this purpose because their hole mobility is lower than that of (1 10)-substrates. In this study, we fabricated p-channel LDMOS on both (100)and (1 10)-substrates and compared their on-resistance. Both types of samples were fabricated using double metallization and a hexagonal pattern similar to that described in ref. 1. The resistivity of the n-type substrates used in fabricating both sample types was kept constant at","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128025027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new recessed gate MOSFET structure with the graded source/drain","authors":"Woo-Hyeong Lee, Young-June Park, J. Lee","doi":"10.1109/DRC.1993.1009567","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009567","url":null,"abstract":"Summary form only given. A gate recessed MOS (GR-MOS) structure with the selectively halo-doped channel by boron implantation carried out after graded (source/drain) (S/D) formation is proposed. The S/D is formed without n/sup +/ counter-doping to the channel doping. Initial characterization results of GR-MOSFETs having a 0.25 mu m channel length are presented in comparison with the conventional lightly doped drain (LDD)-MOSFETs. It was verified that the new concept gives improved device characteristics over the LDD structure for a wide range of bias conditions and channel lengths, and renders the device design window wider in deep submicron devices. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reflection noise in vertical cavity surface emitting lasers","authors":"J. Bae, H. Temkin, S.E. Swirhoun, W. E. Quinn, P. Brusenbach, C. Parsons, M. Kim, T. Uchida","doi":"10.1109/DRC.1993.1009587","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009587","url":null,"abstract":"Summary form only given. A study of the effect of backreflections on the relaxation oscillation of low-threshold ( >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129408676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low voltage hetero-nipi waveguide modulators","authors":"G. Yoffe, J. Brubach, W. van der Vleuten, F. Karouta, J. H. Wolter","doi":"10.1109/DRC.1993.1009626","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009626","url":null,"abstract":"We have made waveguide modulators that give large modulation depth and phase shift with applied voltages around 1 to 2 V. Quantum-well modulators' work using a red shift of the absorption edge or the change in refractive index that occurs when an electric field is applied across the quantum wells in the waveguide core. In normal p-i-n structures the doped cladding layers act as electrical contacts. In our \"hetero-nip?' design the multiple-quantum-well region is split into several thin regions separated by doped layers, alternating between nand ptype. When ohmic contacts are applied, connecting all the n-type layers together and likewise the p-type layers, the necessary large electric field across the quantum wells is obtained with a small applied voltage. Making the selective contacts is a problem. A shadowed regrowth technique' has been demonstrated on a reflection modulator operating by band-filling in quantum wells. A simpler method, demonstrated on a tunable Bragg mirror, is to etch a mesa with sloping walls through the entire structure and to apply lateral contacts on the walls3 We have, for the first time, made a waveguide 'modulator with a hetero-nipi core. It performed more efficiently than any reported p-i-n structure. Our device, grown by molecular beam epitaxy on a semi-insulating GaAs substrate, had a waveguide core containing 2 complete n-i-p-i periods. Each intrinsic layer contained ten 75 8, GaAs quantum wells with 45 A AlAs barriers. AlAs has an advantage over AlGaAs as a barrier material because it gives greater confinement at high electric fields! Each nor pdoped layer comprised 8 periods of 40 8, GaAs/22 AlAs superlattice, doped at 2 x 10\" ~ m ~ . The doped superlattice was used rather than AlGaAs to avoid contacting problems. The waveguide cladding layers were undoped M.,Ga,,As, 1.5 pm thick. Waveguide ridges were formed by wet etching. A wider mesa was then etched through to the lower cladding layer. Selective lateral ohmic contacts, Sn/Au for n-type and Zn/Au for p-type, were deposited on the sloping walls of the outer mesa. Satisfactory diode characteristics were obtained. A typical 300 pm device gave a reverse current of 50 ,uA at -1 V, compared to 1.4 mA at 1 V forward bias. Working in electroabsorption mode with 844 nm =-polarized light from a Ti:Sapphire laser, a 300 pm device gave a modulation ratio of 10: 1 at 1.0 V applied reverse bias, 100: 1 at 1.8 V. The zero-bias absorption loss was 4 dB. A 400 pm device was then tested as a phase modulator. It was placed in one arm of Mach-Zehnder interferometer, and an infra-red TV camera was used to view the resulting fringes. A phase shift of 180\" was obtained at 860 nm with negligible absorption losses at 1.5 V applied, and at 845 nrn with 3 dB of electroabsorption loss and only 0.8 V applied. The \"figure of merit\", defined as phase shift per mrn length and Volt, was as high as 560\"/Vmm. To our knowledge, this value is four times greater than that for any previously reported","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121286101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Very low forward drop JBS rectifiers fabricated using submicron technology","authors":"M. Mehrotra, B. J. Baliga","doi":"10.1109/DRC.1993.1009606","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009606","url":null,"abstract":"Summary form only given. The impact of using submicron technology (0.5- mu m design rules) on JBS (junction barrier controlled Schottky) rectifiers is examined. Two-dimensional numerical simulations demonstrate that decreasing P/sup +/-junction width and depth improves the on-state voltage drop. This is due to the improved utilization of the active area for the Schottky region and improved spreading of majority carrier current from the Schottky contact. However, a junction depth of less than 0.3 mu m results in an undesirable high electric field at the Schottky interface during reverse bias, leading to barrier height lowering, which produces a large leakage current. A large reduction in the spreading resistance is possible by increasing the N-epitaxial layer doping and by reducing the cell pitch in order to achieve the same pinch-off voltage. However, increasing the doping above 2*10/sup 16/ cm/sup -3/ reduces the breakdown voltage below 25 V (which is required for 5 V power supplies). The simulations showed that, by using a proper choice of N-doping and P/sup +/-linewidth, one can reduce the leakage by one to two orders of magnitude as compared to a conventional Schottky buried diode. Experiments conducted to verify the simulations clearly demonstrate that the use of submicron technology can lead to significant improvement in JBS rectifier characteristics. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"226 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115957873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AlGaAs/GaAs Pnp HBT with 54 GHz F/sub max/ and application to high-performance complementary technology","authors":"D. Hill, T.S. Kim, H. Tserng","doi":"10.1109/DRC.1993.1009582","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009582","url":null,"abstract":"Summary form only given. A self-aligned AlGaAs/GaAs Pnp HBT (heterojunction bipolar transistor) with a maximum frequency of oscillation of 54 GHz is reported. Improvements in device speed over previous work were obtained by optimization of epitaxial structure and reduction of base contact resistance. The PnP epitaxial structure was grown by nonarsine MOVPE (metal-organic vapor-phase epitaxy), with silicon and carbon as the donor and acceptor dopants. The Pnp HBT epitaxial structure was incorporated into recessed areas in wafers with a previously grown Npn HBT epi structure, and the two device types were fabricated simultaneously. Pnp and Npn devices on a single wafer achieved f/sub max/ of 50 and 90 GHz, respectively. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115894661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Asymmetric fabry-perot modulators with millimeter-wave (37 GHz) frequency response","authors":"C. Barron, C. Mahon, B. Thibeault, G. Wang, J. Karin, L. Coldren, J.E. Bowels","doi":"10.1109/DRC.1993.1009636","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009636","url":null,"abstract":"Summary form only given. AFPMs (asymmetric Fabry-Perot modulators) with good DC operating characteristics (20 dB contrast, 1.5 dB insertion loss) which also are capable of operating in the mm-wave regime have been designed and fabricated. Measurements are presented attesting that these AFPMs roll off at 37 GHz, a speed far higher than that of any other transverse modulators to date and competitive with even the fastest traveling-wave modulators. The calibrated response shows the expected 3-dB bandwidth of 37 GHz for equivalent CW (continuous wave) incident optical powers less than about 100 mu W, and a transit-limited 18 GHz for higher optical intensities. These high-speed AFPMs should open possibilities of smart interconnection and switching systems with extremely high aggregate bit rates. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122803770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/In/sub 1-x/As power HEMT breakdown voltage on schottky layer design and device layout","authors":"J.J. Brown, A. Brown, S. Rosenbaum, A. S. Schmitz, M. Matloubian, L. Larson, M. Melendes, M. Thompson","doi":"10.1109/DRC.1993.1009579","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009579","url":null,"abstract":"Summary form only given. A systematic study of the improvement of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As on InP device with a sheet of charge placed at the center of the 300 AA wide channel. The device with a gate length of 0.5 mu m, a source-drain spacing of 5 mu m, and an Al/sub 0.7/In/sub 0.3/As Schottky layer exhibited the best breakdown characteristics of mod BV/sub gd/ mod =6.8 V and BV/sub ds/=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500- mu m-wide devices at 4 GHz and V/sub ds/=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125146274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"113-GHz fT graded-base SiGe HBTs","authors":"E. Crabbé, B. Meyerson, D. Harame, J. Stork, A. Megdanis, J. Cotte, J. Chu, M. Gilbert, C. Stanis, J. Comfort, G. Patton, S. Subbanna","doi":"10.1109/DRC.1993.1009564","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009564","url":null,"abstract":"A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128396938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}