{"title":"连续波可见InGaP/InGaAlP量子阱表面发射激光二极管","authors":"K. Huang, K. Tai, C.C. Wu, J. Wynn","doi":"10.1109/DRC.1993.1009633","DOIUrl":null,"url":null,"abstract":"Summary form only given. Vertical-cavity surface-emitting lasers in the 0.66 mu m visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In/sub 0.5/Ga/sub 0.5/P (80 AA)/In/sub 0.5/Al/sub 0.5/GaP (60AA) quantum wells as the active medium. The quantum wells are located in the middle of a one lambda -thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, I/sub th/, are 3.9 and 4.6 mA at -75 and -25 degrees C, respectively, for 15 mu m diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I/sub th/ of 12 mA at 25 degrees C. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes\",\"authors\":\"K. Huang, K. Tai, C.C. Wu, J. Wynn\",\"doi\":\"10.1109/DRC.1993.1009633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Vertical-cavity surface-emitting lasers in the 0.66 mu m visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In/sub 0.5/Ga/sub 0.5/P (80 AA)/In/sub 0.5/Al/sub 0.5/GaP (60AA) quantum wells as the active medium. The quantum wells are located in the middle of a one lambda -thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, I/sub th/, are 3.9 and 4.6 mA at -75 and -25 degrees C, respectively, for 15 mu m diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I/sub th/ of 12 mA at 25 degrees C. >\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes
Summary form only given. Vertical-cavity surface-emitting lasers in the 0.66 mu m visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In/sub 0.5/Ga/sub 0.5/P (80 AA)/In/sub 0.5/Al/sub 0.5/GaP (60AA) quantum wells as the active medium. The quantum wells are located in the middle of a one lambda -thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, I/sub th/, are 3.9 and 4.6 mA at -75 and -25 degrees C, respectively, for 15 mu m diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I/sub th/ of 12 mA at 25 degrees C. >
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