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a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition 使用稀气等离子体增强化学气相沉积的a-Si薄膜晶体管
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009602
S. Wright, M. Rothwell, I.H. Souk, Y. Kuo
{"title":"a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition","authors":"S. Wright, M. Rothwell, I.H. Souk, Y. Kuo","doi":"10.1109/DRC.1993.1009602","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009602","url":null,"abstract":"Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H/sub 2/, which greatly reduces the explosion hazards associated with silane. The quality of a-Si produced by low-power, He-diluted silane at rates of approximately 1 AA/s is comparable to that made with pure silane. He dilution has also been utilized to control the properties of SiO/sub 2/ and SiN/sub x/ insulators deposited by PECVD. Using this approach, the effects of several material aspects on TFT characteristics were examined. The TFT structures were bottom-gate, inverted-staggered devices with deposited n/sup +/ microcrystalline silicon contacts. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125737743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental realization of the bound state resonant tunneling transistor 束缚态谐振隧道晶体管的实验实现
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009609
W. Chen, G. Haddad, G. Munns, J. East
{"title":"Experimental realization of the bound state resonant tunneling transistor","authors":"W. Chen, G. Haddad, G. Munns, J. East","doi":"10.1109/DRC.1993.1009609","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009609","url":null,"abstract":"Summary form only given. Bound states resonant tunneling transistors (BSRTTs) with direct contacts to ultrathin base layers ( approximately 60 AA) have been experimentally realized. In the BSRTT structure, bound states are created in the quantum well by using a base material with a low band gap. Electrons in these bound states form a low-resistance base region for application of bias to the device. Resonant tunneling of electrons via the second energy level in the well results in negative differential transconductance (NDT) or negative differential resistance (NDR) in the output current. This NDT or NDR can be used for applications in high-speed digital circuits to reduce the complexity of conventional transistor technology. The BSRTTs studied consist of a 3000-AA In/sub 0.53/Ga/sub 0.47/As emitter layer doped at 5*10/sup 18/ cm/sup -3/, an emitter stepped barrier which includes a 500-AA n/sup +/ and a 300-AA undoped In/sub 0.52/Al/sub 0.48/ layer, a 20-AA AlAs barrier, a 60-AA In/sub 0.75/Ga/sub 0.25/As base layer doped at 5*10/sup 18/ cm/sup -3/, a 20-AA AlAs barrier, a 1000-AA undoped In/sub 0.52/Al/sub 0.48/As collector barrier, and a 5000-AA In/sub 053/GA/sub 0/./sub 47/As collector layer doped at 5*10/sup 18/ cm/sup -3/. Device testing results are reported. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121479595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Normal incidence detector using Ge quantum well structures grown on Si [100] 在Si上生长的Ge量子阱结构的正入射探测器[100]
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009622
Chanho Lee, S. Chun, K.L. Wang
{"title":"Normal incidence detector using Ge quantum well structures grown on Si [100]","authors":"Chanho Lee, S. Chun, K.L. Wang","doi":"10.1109/DRC.1993.1009622","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009622","url":null,"abstract":"Summary form only given. The normal incidence detection of light by Sb delta -doped Ge/Si/sub 1-x/Ge/sub x/ multiple quantum well (MQW) structures grown on Si","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126996727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physics of breakdown in InAlAs/InGaAs MODFETs InAlAs/InGaAs modfet的击穿物理
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009577
S. Bahl, J. D. del Alamo, J. Dickmann, S. Schildberg
{"title":"Physics of breakdown in InAlAs/InGaAs MODFETs","authors":"S. Bahl, J. D. del Alamo, J. Dickmann, S. Schildberg","doi":"10.1109/DRC.1993.1009577","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009577","url":null,"abstract":"A detailed study of the physics of off-state breakdown in state-of-the-art lattice-matched and pseudomorphic InAlAs/InGaAs MODFETs is presented. It is found that, similarly to heterojunction avalanche photodiodes, breakdown in these devices is a two-step process. First, electrons are injected from the gate into the channel through thermionic-field emission. Second, because of the large conduction-band offset and the electric field in the insulator, these electrons enter the channel hot and immediately relax their energy through impact-ionization. The findings obtained suggest that there is considerable room for breakdown voltage engineering in InAlAs/InGaAs MODFETs by the use of a higher-barrier low-InAs insulator, a thicker undoped barrier-layer, and enhancement of the channel bandgap by quantum confinement. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116570833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of polysilicon TFTs for 16 MB SRAMs and beyond 用于16mb及以上ram的多晶硅tft的发展
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009597
S. Batra, R. Maddox, L. Tran, M. Manning, C. Dennison, P. Fazan
{"title":"Development of polysilicon TFTs for 16 MB SRAMs and beyond","authors":"S. Batra, R. Maddox, L. Tran, M. Manning, C. Dennison, P. Fazan","doi":"10.1109/DRC.1993.1009597","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009597","url":null,"abstract":"Summary form only given. The authors discuss the development and optimization of polysilicon grain microstructure, gate dielectric ,and light doped drain offset (LDO) for thin-film transistors (TFTs). The nominal TFTs used in this study had a W/L of 0.7/1.2 mu m with a drain offset of 0.3 mu m. Different gate dielectrics (SiO/sub 2/, NO, ONO) with thickness of 10-50 nm were evaluated. The results suggest that an LDO implant is essential for obtaining ON/OFF ratios greater than 10/sup 5/ while reducing the TFT sensitivity to drain-offset misalignment. The ONO dielectric is superior to NO stacks or oxide in terms of oxide leakage and ON/OFF ratios. A 3*10/sup 14/ Si implant after solid-phase crystallization (SPC) improves the slope by reducing the interface trap density. Therefore, significant performance enhancements in leakage ( 10/sup 6/) can be realized using LDO TFTs with stacked gates and an Si implant following SPC. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114952352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High voltage 6H-SiC rectifiers: prospects and progress 高压6H-SiC整流器:展望与进展
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009605
P. Neudeck, D. J. Larkin, J. Powell, L. Matus
{"title":"High voltage 6H-SiC rectifiers: prospects and progress","authors":"P. Neudeck, D. J. Larkin, J. Powell, L. Matus","doi":"10.1109/DRC.1993.1009605","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009605","url":null,"abstract":"Summary form only given. There are several crucial device fabrication issues that must be solved before truly advantageous SiC power devices can be realized experimentally. Progress in the fabrication of experimental high-voltage epitaxial pn and Schottky junction 6H-SiC diodes is reported. Doping concentrations in 6H-SiC epilayers grown by atmospheric-pressure chemical vapor deposition have been reduced, making possible the fabrication of 2000-V silicon carbide diode rectifiers ever reported. A 24- mu m-thick 2*10/sup 15/ cm/sup -3/ n-type epilayer was the key to the 600-V improvement in reported 6H-SiC blocking voltage in the p/sup +/n mesa-structure diodes. The devices on this wafer were small enough (areas >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133665235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Temperature and scaling behavior of Strained-Si N-MOSFETs 应变si n - mosfet的温度和结垢行为
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009565
J. Weise, J. Hoyt, J. Gibbons
{"title":"Temperature and scaling behavior of Strained-Si N-MOSFETs","authors":"J. Weise, J. Hoyt, J. Gibbons","doi":"10.1109/DRC.1993.1009565","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009565","url":null,"abstract":"Summary form only given. The device characteristics of N-MOSFETs fabricated in strained-Si have been investigated as a function of temperature and gate length. It is found that the low field mobility is enhanced compared to Si control devices at temperatures down at 20 K. For moderate fields, g/sub m/ is enhanced at all measured temperatures, for effective gate lengths down to 0.8 mu m (L/sub drawn/=1.5 mu m). At high power density, however, the devices exhibit a negative differential output resistance. The thermal conductivity of the relaxed Si/sub 1-x/Ge/sub x/ buffer layers is estimated by fitting polysilicon resistor characteristics to a first order model. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133806280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions 利用MOMBE在外源碱基区选择性生长制备高f/亚max/ AlGaAs/InGaAs和AlGaAs/GaAs HBTs
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009595
H. Shimawaki, Y. Amamiya, N. Furuhata, K. Honjo
{"title":"High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions","authors":"H. Shimawaki, Y. Amamiya, N. Furuhata, K. Honjo","doi":"10.1109/DRC.1993.1009595","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009595","url":null,"abstract":"Summary form only given. AlGaAs/GaAs and AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with excellent microwave performance are reported. An f/sub T/ of 102 GHz and an f/sub max/ of 224 GHz are achieved, using selective growth of heavily C-doped GaAs layers in extrinsic base regions, in combination with a 40-nm-thick compositionally graded InGaAs base structure. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130352800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Low threshold, electrically injected InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates 低阈值，在GaAs衬底上电注入InGaAsP (1.3 /spl mu/m)垂直腔激光器
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009634
J. Dudley, D. Babic, R. Mirin, L. Yang, B. Miller, Rajeev J Ram, T. Reynolds, E. Hu, J. Bowers
{"title":"Low threshold, electrically injected InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates","authors":"J. Dudley, D. Babic, R. Mirin, L. Yang, B. Miller, Rajeev J Ram, T. Reynolds, E. Hu, J. Bowers","doi":"10.1109/DRC.1993.1009634","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009634","url":null,"abstract":"Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122974275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Anomalous damping in MQW lasers due to slow inter-well transport 由于阱间传输缓慢导致的MQW激光器中的异常阻尼
51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009571
A. Hangleiter, A. Grabmaier, G. Fuchs
{"title":"Anomalous damping in MQW lasers due to slow inter-well transport","authors":"A. Hangleiter, A. Grabmaier, G. Fuchs","doi":"10.1109/DRC.1993.1009571","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009571","url":null,"abstract":"Summary form only given. The authors present a model for MQW (multiple quantum well) lasers, using the laser rate equations, which includes transport of carriers between the individual wells of MQW lasers. This model provides the first consistent explanation for the anomalously high damping in MQW lasers. It is found that, while electron and hole transfer times both are of the order of 3 ps for typical InGaAs/InGaAlAs structures, hole transfer is much slower than electron transfer in InGaAs/InGaAsP structures, with the hole transfer time being of the order of 100 ps. Since the stimulated recombination times are of the order of 100 ps, this means that one may expect an inhomogeneous hole distribution for the latter case, whereas the carrier distribution is homogeneous for the former case. The effective differential gain derived from the resonance frequency vs. power is found to be almost equal for the two types of lasers. There is a significantly higher damping for the InGaAs/InGaAsP laser, which can be described by an effective gain compression factor almost four times higher than for InGaAs/InGaAlAs. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121581734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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