{"title":"在Si上生长的Ge量子阱结构的正入射探测器[100]","authors":"Chanho Lee, S. Chun, K.L. Wang","doi":"10.1109/DRC.1993.1009622","DOIUrl":null,"url":null,"abstract":"Summary form only given. The normal incidence detection of light by Sb delta -doped Ge/Si/sub 1-x/Ge/sub x/ multiple quantum well (MQW) structures grown on Si","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Normal incidence detector using Ge quantum well structures grown on Si [100]\",\"authors\":\"Chanho Lee, S. Chun, K.L. Wang\",\"doi\":\"10.1109/DRC.1993.1009622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The normal incidence detection of light by Sb delta -doped Ge/Si/sub 1-x/Ge/sub x/ multiple quantum well (MQW) structures grown on Si\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Normal incidence detector using Ge quantum well structures grown on Si [100]
Summary form only given. The normal incidence detection of light by Sb delta -doped Ge/Si/sub 1-x/Ge/sub x/ multiple quantum well (MQW) structures grown on Si