利用MOMBE在外源碱基区选择性生长制备高f/亚max/ AlGaAs/InGaAs和AlGaAs/GaAs HBTs

51st Annual Device Research Conference Pub Date : 1993-06-21 DOI:10.1109/DRC.1993.1009595

H. Shimawaki, Y. Amamiya, N. Furuhata, K. Honjo

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引用次数: 5

摘要

只提供摘要形式。报道了具有优异微波性能的AlGaAs/GaAs和AlGaAs/InGaAs异质结双极晶体管(HBTs)。通过在外源基底区选择性生长重c掺杂的GaAs层，结合40 nm厚的成分梯度InGaAs基底结构，获得了102 GHz的f/sub T/和224 GHz的f/sub max/。>

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High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions

Summary form only given. AlGaAs/GaAs and AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with excellent microwave performance are reported. An f/sub T/ of 102 GHz and an f/sub max/ of 224 GHz are achieved, using selective growth of heavily C-doped GaAs layers in extrinsic base regions, in combination with a 40-nm-thick compositionally graded InGaAs base structure. >

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51st Annual Device Research Conference

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