{"title":"使用稀气等离子体增强化学气相沉积的a-Si薄膜晶体管","authors":"S. Wright, M. Rothwell, I.H. Souk, Y. Kuo","doi":"10.1109/DRC.1993.1009602","DOIUrl":null,"url":null,"abstract":"Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H/sub 2/, which greatly reduces the explosion hazards associated with silane. The quality of a-Si produced by low-power, He-diluted silane at rates of approximately 1 AA/s is comparable to that made with pure silane. He dilution has also been utilized to control the properties of SiO/sub 2/ and SiN/sub x/ insulators deposited by PECVD. Using this approach, the effects of several material aspects on TFT characteristics were examined. The TFT structures were bottom-gate, inverted-staggered devices with deposited n/sup +/ microcrystalline silicon contacts. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition\",\"authors\":\"S. Wright, M. Rothwell, I.H. Souk, Y. Kuo\",\"doi\":\"10.1109/DRC.1993.1009602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H/sub 2/, which greatly reduces the explosion hazards associated with silane. The quality of a-Si produced by low-power, He-diluted silane at rates of approximately 1 AA/s is comparable to that made with pure silane. He dilution has also been utilized to control the properties of SiO/sub 2/ and SiN/sub x/ insulators deposited by PECVD. Using this approach, the effects of several material aspects on TFT characteristics were examined. The TFT structures were bottom-gate, inverted-staggered devices with deposited n/sup +/ microcrystalline silicon contacts. >\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition
Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H/sub 2/, which greatly reduces the explosion hazards associated with silane. The quality of a-Si produced by low-power, He-diluted silane at rates of approximately 1 AA/s is comparable to that made with pure silane. He dilution has also been utilized to control the properties of SiO/sub 2/ and SiN/sub x/ insulators deposited by PECVD. Using this approach, the effects of several material aspects on TFT characteristics were examined. The TFT structures were bottom-gate, inverted-staggered devices with deposited n/sup +/ microcrystalline silicon contacts. >
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