Low threshold, electrically injected InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates

Abstract

Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection. >