{"title":"高压6H-SiC整流器:展望与进展","authors":"P. Neudeck, D. J. Larkin, J. Powell, L. Matus","doi":"10.1109/DRC.1993.1009605","DOIUrl":null,"url":null,"abstract":"Summary form only given. There are several crucial device fabrication issues that must be solved before truly advantageous SiC power devices can be realized experimentally. Progress in the fabrication of experimental high-voltage epitaxial pn and Schottky junction 6H-SiC diodes is reported. Doping concentrations in 6H-SiC epilayers grown by atmospheric-pressure chemical vapor deposition have been reduced, making possible the fabrication of 2000-V silicon carbide diode rectifiers ever reported. A 24- mu m-thick 2*10/sup 15/ cm/sup -3/ n-type epilayer was the key to the 600-V improvement in reported 6H-SiC blocking voltage in the p/sup +/n mesa-structure diodes. The devices on this wafer were small enough (areas >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"High voltage 6H-SiC rectifiers: prospects and progress\",\"authors\":\"P. Neudeck, D. J. Larkin, J. Powell, L. Matus\",\"doi\":\"10.1109/DRC.1993.1009605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. There are several crucial device fabrication issues that must be solved before truly advantageous SiC power devices can be realized experimentally. Progress in the fabrication of experimental high-voltage epitaxial pn and Schottky junction 6H-SiC diodes is reported. Doping concentrations in 6H-SiC epilayers grown by atmospheric-pressure chemical vapor deposition have been reduced, making possible the fabrication of 2000-V silicon carbide diode rectifiers ever reported. A 24- mu m-thick 2*10/sup 15/ cm/sup -3/ n-type epilayer was the key to the 600-V improvement in reported 6H-SiC blocking voltage in the p/sup +/n mesa-structure diodes. The devices on this wafer were small enough (areas >\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High voltage 6H-SiC rectifiers: prospects and progress
Summary form only given. There are several crucial device fabrication issues that must be solved before truly advantageous SiC power devices can be realized experimentally. Progress in the fabrication of experimental high-voltage epitaxial pn and Schottky junction 6H-SiC diodes is reported. Doping concentrations in 6H-SiC epilayers grown by atmospheric-pressure chemical vapor deposition have been reduced, making possible the fabrication of 2000-V silicon carbide diode rectifiers ever reported. A 24- mu m-thick 2*10/sup 15/ cm/sup -3/ n-type epilayer was the key to the 600-V improvement in reported 6H-SiC blocking voltage in the p/sup +/n mesa-structure diodes. The devices on this wafer were small enough (areas >
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
