J.J. Brown, A. Brown, S. Rosenbaum, A. S. Schmitz, M. Matloubian, L. Larson, M. Melendes, M. Thompson
{"title":"Ga/sub 0.47/In/sub 0.53/As/Al/sub x/In/sub 1-x/As功率HEMT击穿电压对肖特基层设计和器件布局的影响研究","authors":"J.J. Brown, A. Brown, S. Rosenbaum, A. S. Schmitz, M. Matloubian, L. Larson, M. Melendes, M. Thompson","doi":"10.1109/DRC.1993.1009579","DOIUrl":null,"url":null,"abstract":"Summary form only given. A systematic study of the improvement of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As on InP device with a sheet of charge placed at the center of the 300 AA wide channel. The device with a gate length of 0.5 mu m, a source-drain spacing of 5 mu m, and an Al/sub 0.7/In/sub 0.3/As Schottky layer exhibited the best breakdown characteristics of mod BV/sub gd/ mod =6.8 V and BV/sub ds/=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500- mu m-wide devices at 4 GHz and V/sub ds/=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/In/sub 1-x/As power HEMT breakdown voltage on schottky layer design and device layout\",\"authors\":\"J.J. Brown, A. Brown, S. Rosenbaum, A. S. Schmitz, M. Matloubian, L. Larson, M. Melendes, M. Thompson\",\"doi\":\"10.1109/DRC.1993.1009579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. A systematic study of the improvement of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As on InP device with a sheet of charge placed at the center of the 300 AA wide channel. The device with a gate length of 0.5 mu m, a source-drain spacing of 5 mu m, and an Al/sub 0.7/In/sub 0.3/As Schottky layer exhibited the best breakdown characteristics of mod BV/sub gd/ mod =6.8 V and BV/sub ds/=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500- mu m-wide devices at 4 GHz and V/sub ds/=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively. >\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/In/sub 1-x/As power HEMT breakdown voltage on schottky layer design and device layout
Summary form only given. A systematic study of the improvement of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As on InP device with a sheet of charge placed at the center of the 300 AA wide channel. The device with a gate length of 0.5 mu m, a source-drain spacing of 5 mu m, and an Al/sub 0.7/In/sub 0.3/As Schottky layer exhibited the best breakdown characteristics of mod BV/sub gd/ mod =6.8 V and BV/sub ds/=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500- mu m-wide devices at 4 GHz and V/sub ds/=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively. >
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