Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/In/sub 1-x/As power HEMT breakdown voltage on schottky layer design and device layout

51st Annual Device Research Conference Pub Date : 1993-06-21 DOI:10.1109/DRC.1993.1009579

J.J. Brown, A. Brown, S. Rosenbaum, A. S. Schmitz, M. Matloubian, L. Larson, M. Melendes, M. Thompson

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引用次数: 14

Abstract

Summary form only given. A systematic study of the improvement of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As on InP device with a sheet of charge placed at the center of the 300 AA wide channel. The device with a gate length of 0.5 mu m, a source-drain spacing of 5 mu m, and an Al/sub 0.7/In/sub 0.3/As Schottky layer exhibited the best breakdown characteristics of mod BV/sub gd/ mod =6.8 V and BV/sub ds/=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500- mu m-wide devices at 4 GHz and V/sub ds/=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively. >

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Ga/sub 0.47/In/sub 0.53/As/Al/sub x/In/sub 1-x/As功率HEMT击穿电压对肖特基层设计和器件布局的影响研究

只提供摘要形式。本文系统地研究了通过改变肖特基层设计和器件几何形状来提高Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As高电子迁移率晶体管(HEMT)击穿电压。所研究的HEMT结构是在InP器件上调制掺杂Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As，并在300 AA宽通道的中心放置电荷片。栅极长度为0.5 μ m，源漏间距为5 μ m, Al/sub 0.7/In/sub 0.3/As Schottky层的器件在mod BV/sub gd/ mod =6.8 V和BV/sub ds/=7.8 V时表现出最佳击穿特性。典型晶体管的最大跨导为500 mS/mm，栅极偏置为0.4 V时，全通道电流为700 mA/mm，电流增益截止频率超过80 GHz。在500 μ m宽的器件上，在4 GHz和V/sub /=4.5 V下测量功率性能。在AB类工况下，输出功率密度为0.45 W/mm，功率增益为59%，功率增益为14.25 dB。>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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51st Annual Device Research Conference

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