113-GHz光纤分级基SiGe hbt

51st Annual Device Research Conference Pub Date : 1993-06-21 DOI:10.1109/DRC.1993.1009564

E. Crabbé, B. Meyerson, D. Harame, J. Stork, A. Megdanis, J. Cotte, J. Chu, M. Gilbert, C. Stanis, J. Comfort, G. Patton, S. Subbanna

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引用次数: 24

摘要

采用一种新颖的低温循环工艺制备了具有创纪录单位电流增益截止频率的外延硅基异质结双极晶体管(HBTs)。该工艺包括一个原位磷-多镉多晶硅发射极，其只需要800°C-10s退火。当基片电阻为7 kΩ/平方时，在VCB为1V时获得了113ghz的峰值fT。

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113-GHz fT graded-base SiGe HBTs

A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.

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来源期刊

51st Annual Device Research Conference

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