51st Annual Device Research Conference最新文献

{"title":"High temperature superconductor subbarmonically-pumped digital phase modulator/demodulator","authors":"L. Drabeck, P. Polakos, M. O’Malley, P. Mankiewich","doi":"10.1109/DRC.1993.1009620","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009620","url":null,"abstract":"Summary form only given. High-temperature superconducting technology along with conventional semiconducting elements has been incorporated into the design of a subharmonically pumped digital phase modulator and demodulator capable of Gb/s transmission rates. The appropriate bandpass filters, stopband filters, and matching networks are fabricated from postannealed double-sided YBa/sub 2/Cu/sub 3/O/sub 7/ films on 10 mil LaAlO/sub 3/. Typically, these films have T/sub c/>90 K, J/sub c/>2*10/sup 6/ A/cm/sup 2/ at 77 K, and surface resistance at 10 GHz and 77 K of approximately 0.6 Omega /sq. The use of superconducting microstrip filters and matching elements with conventional nonlinear devices provides significant performance improvements, including higher bit rates, lower intersymbol interference, and lower conversion loss than for conventional circuits. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121374199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single transverse mode, low threshold current vertical cavity surface emitting laser","authors":"Y.A. Wu, C. Chang-Hasnain, G.S. Li, R. Nabiev","doi":"10.1109/DRC.1993.1009586","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009586","url":null,"abstract":"Summary form only given. The authors report buried heterostructure (BH) vertical cavity surface emitting lasers (VCSELs) emitting a single TEM/sub 00/ mode with a predetermined polarization and low-threshold currents. A threshold current of 0.8 mA and a record-low threshold-density of 490 A/cm/sup 2/ have been achieved with 8 and 32 mu m diameter lasers, respectively. The VCSEL heterostructure used includes three InGaAs strained quantum wells, and 15 and 20.5 pairs of GaAs-AlAs as the top and bottom Bragg reflectors, respectively, grown by molecular beam epitaxy. The threshold currents of 8, 16, and 32 mu m BH VCSELs are 0.8, 1.2, and 3.5 mA, respectively. Both the 8 and 16 mu m BH VCSELs emit a single TEM/sub 00/ mode up to four to five times threshold. The emission is linearly polarized in a predetermined direction. The stable single-mode behavior is attributed to the combination of index-guiding in the active region and anti-index-guiding in the Bragg reflectors. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124896102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A high speed and low power on CMOS/SOI technology","authors":"M. Lee, M. Fujishima, K. Asada","doi":"10.1109/DRC.1993.1009569","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009569","url":null,"abstract":"Summary form only given. The propagation delay times were improved up to two times in deep-submicron CMOS/SIMOX ring oscillators by reducing the poly-Si gate thickness (t/sub m/). The measured power dissipations with 0.1- to 0.25- mu m gate length are under 1.5 fJ, while theoretical minimum power dissipations can be reduced down to 0.1 fJ for 0.15- mu m gate length at a supply voltage of 1.5 V. SOI technology shows promise for high speed and low power by reducing the gate fringing capacitance which is correlated to t/sub m/. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"129 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124714587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel quantum effect fet with resonantly modulated transfer characteristics","authors":"Y. Ohno, M. Tsuchiya, H. Sakaki","doi":"10.1109/DRC.1993.1009612","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009612","url":null,"abstract":"Summary form only given. A novel quantum effect field-effect transistor (FET) has been realized in which drain current is resonantly modulated with gate-source voltage by using the mobility-modulation effect in a double quantum well structure. Such characteristics are achieved by gate-controlled resonant coupling, which leads to a large positive-negative-positive transconductance. This may make a new functional device feasible by rather simple FET-compatible processes. As long as the bias and the load are appropriately set, this FET can offer novel functionalities such as frequency multiplier action. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122177574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monte carlo simulation of the effect of multiplication layer thickness in wide-bandwidth avalanche photodiodes","authors":"V. Chandramouli, C.M. Maziar, J. Campbell","doi":"10.1109/DRC.1993.1009615","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009615","url":null,"abstract":"Summary form only given. The impact ionization process was studied in thin multiplication layers used in wide-bandwidth SAGM-APDs (separate absorption, grading, and multiplication avalanche photodiodes) using wave-vector-dependent threshold energies for impact ionization and a full-band Monte Carlo model. Results show that the number of ionizing collisions is reduced in thin layers, leading to an increase in the effective beta / alpha ratio and explaining the experimentally observed reduction in the excess noise factor. It is also shown that, even though the values of alpha and beta in III-V semiconductors converge at high electric fields, it is possible to use thin multiplication regions to reduce the excess noise factor and at the same time increase the bandwidth of the device operation. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129232528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-high efficiency light-emitting-diode arrays","authors":"I. Schnitzer, E. Yablonovitch, A. Erşen, A. Scherer, C. Caneau, T. Gmitter","doi":"10.1109/DRC.1993.1009575","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009575","url":null,"abstract":"Summary form only given. An approach to increasing the escape probability for light-emitting diodes (LEDs) is proposed which involves the angular randomization by elastic scattering of the photons from a textured semiconductor surface. The approach has two components: (i) separation of thin-film heterojunctions from the growth substrate using the epitaxial liftoff (ELO) technique, and (ii) nanotexturing of the thin-film semiconductor interface by natural lithography. The LED structure is a conventional n/sup +/-AlGaAs/p-GaAs/p/sup +/-AlGaAs double heterostructure, grown over a 0.05 mu m thick AlAs release layer by organometallic chemical vapor deposition. The light versus current characteristics of the LEDs have been measured and modeled. A 9% external quantum efficiency from the untextured LED array was observed, transforming into a 30% external quantum efficiency following the surface texturing treatment. It is concluded that, by employing the principle of phase-space-filling in an improved device geometry, 56% efficient LED arrays can be expected. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126626813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Visible (639 nm /spl ngt/ /spl lambda/ /spl ngt/ 661 nm) vertical cavity surface emitting laser diodes","authors":"J. A. Lott, R. P. Schneider, K. Malloy","doi":"10.1109/DRC.1993.1009584","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009584","url":null,"abstract":"We have recently reported optically-pumped lasing in an InGaP/InAlGaP strained quantum well visible vertical cavity surface emitting laser (VCSEL) with both AlAs/AlGaAs distributed Bragg reflectors (DBRs)~ and with InAlPDnAlGaP DBRs2. We have also studied the critical issues for electrical injection in these promising devices and now report the demonstration of the first visible VCSEL diodes. At room temperature with pulsed excitation, the devices lase in a single longitudinal mode within 639.1 nm to 660.7 nm, depending on wafer position. The structures were grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs substrates and consist of an InAlGaP optical cavity active region surrounded by AlGaAs DBRs. The bottom Si-doped DBR consists of 55.5 periods of alternating AlAs and Al,Gal-,As (x = 0.5) quarter-wave layers with x = 0.75 barrier reduction layers at each interface to reduce series resistance. An identical 36 period C-doped top coupling DBR is used and includes a (p+) GaAs metal contact layer. The InAlGaP optical cavity contains three In0.56Gao.& strained quantum wells in a step graded-barrier separate confinement configuration. Device injection efficiency was optimized by studying the performance of edge-emitting lasers with InAlGaP active regions and AlGaAs DBR cladding layers. Gain-guided \"etched post\" test devices were fabricated. A top annulus contact defines emitting diameters of 10 pm and 20 pm with a 5 pm radial thickness, thus, a large percentage of the injected current does not directly contribute to lasing but to device heating. Despite this, lasing wavelengths from 639.1 nm to 660.7 nm were measured, on unrotated wafers, at room temperature without heat-sinking. The pulsed excitation was - 100 ns pulses at 10 kHz to IMHz. Many devices continued lasing with up to a 40% duty cycle at 1MHz. The larger devices typically have a threshold of 30 mA at 2.7 V. The peak output power is 3.38 mW with a resistance of less than 15 0. Substantially improved performance is expected with more sophisticated device processing techniques. This is the first demonstration of InAlGaP visible VCSEL diodes. This work opens the door for advanced device applications such as plastic fiber communications, arrays for displays, interconnects, and holographic memory, and some scanning applications in place of HeNe lasers.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"428 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133780712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A micromachined polyimide aperture for stable bilayer lipid membrane (BLM)s","authors":"M. Eray, N. Dogan, Lianjun Liu, A. Koch, D. Moffett, M. Silber, B. V. Van Wie","doi":"10.1109/DRC.1993.1009616","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009616","url":null,"abstract":"Summary form only given. Silicon micromachining is used to fabricate reproducible miniature apertures over photosensitive polyimide (PPI) layers (septa), with highly controllable dimensions. PPI, having a high level of planarization, chemical inertness, a low dielectric constant, and good mechanical strength, is a very suitable material to be used as BLM septa. Apertures of approximately 5 mu m thickness and approximately 40 mu m diameter in PPI septa suspended over thick silicon rims were realized. The fabrication process includes double-side oxide growth on the wafer, spin-coating the PPI and its patterning, back surface anisotropic window etching, and a final cleaning step. Apertures with high circular symmetry were fabricated using this process. The BLM is formed by dropping a small amount of phospholipid-alkane solution over the PPI aperture. An initially few- mu m-thick membrane spontaneously thins down to an approximately 50 AA thick BLM. Specific capacitance measurements of these BLMs revealed stability of up to 50 h. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123435829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films","authors":"C. Hashimoto, H. Miura, K. Asayama, H. Ohta, S. Ikeda","doi":"10.1109/DRC.1993.1009600","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009600","url":null,"abstract":"Summary form only given. In situ doped polysilicon thin films have been found useful for half-micron technology because the film deposition process is simple and the film surface is rather flat. The characteristics of the film are evaluated experimentally to apply it to a gate electrode material. It is confirmed that the film has much better tolerance to HF penetration than the conventional POCl/sub 3/-treated polysilicon thin film, and has good surface flatness. However, abnormal leakage current is observed in MOSFETs using the in situ doped polysilicon gate, while the leakage current of the MOSFETs using the conventional POCl/sub 3/ treated polysilicon gate is low and stable. The abnormal leakage current is found to be caused by dislocations in the silicon substrate at the gate edges. The films must be annealed fully to eliminate dislocations at the gate edges, which results in a low and stable leakage current level of MOSFETs. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127150929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room-temperature operation of InGaAs-based hot-electron transistors","authors":"T. Moise, A. Seabaugh, E. Beam, Y. Kao, J. Randall","doi":"10.1109/DRC.1993.1009610","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009610","url":null,"abstract":"Summary form only given. It is demonstrated that 300-K operation of an InGaAs-based HET (hot-electron transistor) can be achieved by further increasing the electron injection energy in combination with the use of a wide-bandgap base-collector isolation barrier. The characteristics of a device consisting of an InAlAs emitter, a 10-AA AlAs tunnel-barrier positioned at the emitter-base heterojunction, a 400-AA n+ InGaAs base region, and a 2500-AA InAlGaAs collector barrier are reported. The injected electrons are transported across the base region with over 80% efficiency, as measured in a common-base configuration. The maximum common-emitter current gain in this nonoptimized transistor is nearly four with an f/sub T/ of over 40 GHz and a base-collector breakdown voltage of 1.5 V. A systematic study of RHET (resonant tunneling HET) injector and collection properties indicates that the HET can operate at room temperature with a current gain on the order of 100. 300-K operation of a single-RHET, exclusive-NOR integrated circuit that is similar in design to the one demonstrated at 77 K by N. Yokoyama et al. (1985) is also shown. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121058588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}