51st Annual Device Research Conference最新文献

{"title":"Effects of collector doping on dc and rf performance of AiInAs/GaInAs/InP double heterojunction bipolar transistors","authors":"M. Hafizi, T. Liu, D. Rensch, W. Stanchina","doi":"10.1109/DRC.1993.1009593","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009593","url":null,"abstract":"Summary form only given. AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) with three different InP collector dopings of 1.4*10/sup 16/, 2.4*10/sup 16/, and 3*10/sup 16/ cm/sup -3/ and a collector thickness of 0.75 mu m have been made for microwave power applications. The DC and RF performance of the devices was found to be strongly dependent on the collector doping. This strong sensitivity to the collector doping is due to the conduction band discontinuity between GaInAs and InP at the base-collector junction. DC and RF characterization was performed on 2- mu m*20- mu m single-emitter geometry devices which are used in the construction of the microwave power cells. The DHBTs achieved base-collector breakdown voltages in excess of 20 V and common-emitter breakdown voltages of more than 14 V (both measured at 100 mu A of current). The f/sub T/ and f/sub max/ of the devices were in the range of 65 to 75 GHz. DC current gains were in the range of 50 to 70. The devices with the collector doping of 3*10/sup 16/ cm/sup -3/ could be operated up to 10/sup 5/ A/cm/sup 2/ collector current density without gain compression. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116826678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Excimer-laser crystallized poly-Si TFTs with mobility of more than 600cm/sup 2//Vs","authors":"D. Choi, E. Sadayuki, O. Sugiura, M. Matsumura","doi":"10.1109/DRC.1993.1009603","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009603","url":null,"abstract":"Summary form only given. The authors present excimer-laser-crystallized poly-Si TFTs (thin-film transistors) with a field-effect mobility of greater than 600 cm/sup 2//Vs, which is more than 50% higher than the best value reported to date. The TFT structure, the novel process, and the mechanism for the superior TFT performances are discussed. The results obtained indicate that reduction of heat removal rate from the molten Si layer during an excimer-laser-crystallization step is a key way to improve the performance of poly-Si TFTs on a glass substrate. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122499942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short optical pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE","authors":"Y. Chen, T. Tanbun-ek, R. Logan, A. Tate, A. Sergent, K. Wecht, P. Sciortino","doi":"10.1117/12.175837","DOIUrl":"https://doi.org/10.1117/12.175837","url":null,"abstract":"We report on the generation of short optical pulses by utilizing the non-linear absorption characteristics of a multiple quantum well (MQW) electro-absorption modulator, which is monolithically integrated with a MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Optical pulses as short as 39 ps and 15 ps have been generated at a repetition rate of 3 GHz and 10 GHz, respectively, with a broad tuning range of 5.4 nm near 1554 nm lasing wavelength.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134132231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High voltage implanted RESURF p-LDMOS using BICMOS technology","authors":"Ming-Jiang Zhou, A. de Bruycker, A. Van Calster, J. Witters","doi":"10.1109/DRC.1993.1009607","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009607","url":null,"abstract":"Summary form only given. The authors present a complementary RESURF p-LDMOS in which the n/sup +/ buried layer is used as an effective substrate and a field implant is introduced to modify the drift charges. The implant conditions in this case, particularly the placements, are studied. After processing, V/sub B/ are investigated with different implant placement (L/sub A/, L/sub B/) and field oxide lengths L/sub F/. It is found that although the ion implant covers part of the drift region, the device performance can still be greatly improved. Results show that a long enough implant, compatible with L/sub F/, under the field oxide can result in the maximum, V/sub B/=V/sub BP/. This is verified by simulation results, which show that the peak of the surface electric field is significantly reduced. Results also show that a full length (L/sub F/) implantation under the field oxide can result in the minimum R/sub on/ for a fixed L/sub F/. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134338766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"InAs bipolar transistors: a path to high-performance cryogenic electronics","authors":"P. Dodd, M. Melloch, M. Lundstrom, J. Woodall, D. Pettit","doi":"10.1109/DRC.1993.1009621","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009621","url":null,"abstract":"Summary form only given. The authors present the first demonstration of npn InAs bipolar transistors operating under room temperature and cryogenic conditions. The development of InAs HBTs (heterojunction bipolar transistors) has been hindered by the lack of a suitable wide bandgap emitter. This problem is circumvented by using the pseudo-HBT concept, which relies on the Burnstein shift to effectively widen the bandgap in the n-emitter and bandgap narrowing in the heavily doped p-type base to effectively shrink the base bandgap. For low temperature operation, the resulting bandgap difference should be more than sufficient for a wide-gap emitter as demonstrated by the current gains of more than 100 observed in GaAs pseudo-HBTs operating at 35 K. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117127329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE","authors":"H. Chau, E. Beam","doi":"10.1109/DRC.1993.1009590","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009590","url":null,"abstract":"Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BV/sub CEO/ and BV/sub CBO/ of >7.5 V and 10.6 V, respectively. The 11 mu m/sup 2/ devices exhibited f/sub T/ of 134 GHz and f/sub max/ of 113 GHz at V/sub CE/=1.57 V and I/sub C/=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126625370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization and high speed digital application of GaAs MESFETs on Si substrates","authors":"S. Onozawa, N. Yamamoto, T. Kimura, Y. Sano, M. Akiyama","doi":"10.1109/DRC.1993.1009618","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009618","url":null,"abstract":"Summary form only given. The authors optimized the device structure to suppress the short channel effect due to the residual stress in GaAs/Si substrates and improved the microscopic uniformity. The residual-stress problem was solved by introducing a p-layer (C/sup +/: 140 keV) buried under the n-type channel (Si/sup +/: 20 keV) in the n/sup +/ self-alignment technique with refractory W-Al gate. The authors then evaluated the microscopic uniformity of the device on GaAs/Si using 60- mu m*60- mu m-pitch FET arrays, and found that it is improved by introducing the p-layer. To evaluate the dynamic characteristics, a direct-coupled FET logic (DCFL) ring oscillator was fabricated using a 0.3- mu m-gate MESFET on the GaAs/Si substrate. The propagation delay was as small as 19.9 ps/gate at a supply voltage of 2 V. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126286884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A tunneling injection quantum well laser","authors":"H. Sun, P. Bhattacharya, J. Singh, L. Davis, S. Sethi","doi":"10.1109/DRC.1993.1009572","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009572","url":null,"abstract":"Summary form only given. A tunneling injection mechanism in a GaAs-based laser is demonstrated. The preliminary GaAs-based devices, grown by molecular beam epitaxy, have an 80 AA In/sub 0.10/Ga/sub 0.90/As active single quantum well and AlAs tunneling barriers. These lasers show a characteristic peaking in the small signal modulation response at a particular drive current, which is believed to be related to the tunneling. The principle of operation promises to be a 'cold' laser at high injection levels, eliminating a broad thermal carrier distribution, and therefore Auger recombination and chirp are expected to be suppressed, particularly in InP-based devices. In addition, tunneling of carriers into the active well will ensure very large modulation bandwidths. A peaked gain will ensure higher mode selectivity. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115015529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved charge control and frequency performance in InAs/AlSb HFETs","authors":"C. Bolognesi, E. Caine, H. Kraemer","doi":"10.1109/DRC.1993.1009631","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009631","url":null,"abstract":"Micron-sized InAs/AISb-based heterostructure field-effect transistors (HFETs) generally suffer from a large increase in drain (output) conductance gm that is thought to be related to impact ionization across the small energy gap of the lnAs channel for large drain-to-source biases VDS. The large gDs was found to limit both the frequency performance, and the useful operational range of sub-micron devices to drain biases VDs < 0.4-0.5 V.l In the present paper, we show how the well thickness and the buffer layers influence the charge control properties of InAs/AISb HFETs, and how the kink can be eliminated from the drain characteristics of micron-sized HFETs, resulting in low output conductances and well-behaved drain characteristics. We also demonstrate that a proper buffer layer structure is most beneficial in sub-micron devices, and results in great improvements in operational range and frequency performance. First, we show that an increase in quantization energy, achieved by reducing the InAS well thickness, is not sufficient to eliminate the kink from the device characteristics: InAdAISb HFETs exhibit a kink for well thicknesses ranging from 15 to 7.5 nm. Though narrower wells can be grown, the dominance of interface roughness scattering in narrower wells2 makes them less attractive for high-speed HFET applications. Next, we demonstrate that the kink effect is intimately related to the composition and growth conditions used for the AI,Ga,-Sb buffer layers grown immediately below the device active region to provide a chemically stable mesa floor: with proper alloy compositions and growth conditions, InAdAISb HFETs are essentially kink free, and exhibit output conductances as low as 25 mS/mm (see Fig. 1). We also demonstrate how the addition of donors to the buffer layers can be used to further drastically alter the charge control in the InAs/AISb HFET and yield still lower output conductances. Our observations appear to link the kink effect to the holes generated during impact ionization near the drain end of the gate. Finally, we show that the improvement in buffer layers benefits sub-micron devices as well: cut-off frequencies fT as high as 70 GHz (extrapolated from 40 GHz at -6 dB/oct) were obtained in 0.5 pm devices that can be operated at drain voltages as high as VDs = 1.3 V. The improved charge control results in a nearly doubled f, (for a 17% reduction in gate length) when compared to our previous results.’ This work was supported by the ONR.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127735956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A photonic integrated tunable receiver/optical preamplifier in a vertical coupler filter structure","authors":"Z. Chuang, M. Mondry, D. Young, D. Cohen, L. Coldren","doi":"10.1109/DRC.1993.1009574","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009574","url":null,"abstract":"Summary form only given. The authors propose and demonstrate a novel integrated tunable receiver which integrates a traveling-wave optical preamplifier, a two-stage passive grating-assisted codirectional coupler (GACC) filter, and a photodetector. The GACC filter has been shown to have a wavelength tunability an order of magnitude wider than that of a distributed-Bragg-reflector (DBR) filter. The transmissive style of the filter makes it possible to cascade several optical elements to achieve the high functionality of photonic integration. The device was fabricated on GaAs substrate using strained InGaAs quantum wells for optical gain and GaAs for the index tuning material operating around lambda =0.98 mu m. With zero bias applied to the filter electrodes, the receiving passband was measured to be centered at approximately 0.98 mu m with a FWHM bandwidth of approximately 3 nm. A differential signal gain of 12 dB was obtained when the amplifier current increased from 20 mA to 34 mA. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121422241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}