51st Annual Device Research Conference最新文献_第6页

High wallplug efficiency vertical-cavity top-surface-emitting laser diodes 高壁塞效率垂直腔顶面发射激光二极管

51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009585

K. Lear, S. Chalmers

引用次数: 1

MBE regrowth of LEDs on VLSI GaAs MESFETs VLSI GaAs mesfet上led的MBE再生

51st Annual Device Research Conference Pub Date : 1993-06-21 DOI: 10.1109/DRC.1993.1009617

K. V. Shenoy, C. Fonstad, A. Grot, D. Psaltis

引用次数: 3

Doping-spike LWIR PtSi schottky IR detector fabricated by molecular beam epitaxy 分子束外延制备掺杂尖峰LWIR PtSi肖特基红外探测器

51st Annual Device Research Conference Pub Date : 1993-06-01 DOI: 10.1109/DRC.1993.1009625

T. Lin, J. Park, T. George, E. Jones

引用次数: 1

Forward transit delay in In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with nonequilibrium electron transpor in /sub 0.53/Ga/sub 0.47/As非平衡电子输运异质结双极晶体管的正向传输延迟

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009592

J. Laskar, R. N. Noltenburg, A. Levi

引用次数: 0

High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD 基于MOCVD的高频率、高击穿AlInAs/GaInAs结调制器件(jhemt

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009632

J. Shealy, M. Hashemi, K. Kiziloglu, S. Denbaars, U. Mishra, T.K. Liu, I. Brown, M. Lui

{"title":"High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD","authors":"J. Shealy, M. Hashemi, K. Kiziloglu, S. Denbaars, U. Mishra, T.K. Liu, I. Brown, M. Lui","doi":"10.1109/DRC.1993.1009632","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009632","url":null,"abstract":"AlInAs/GaInAs High Electron Mobility Transistors excellent high frequency and low noise performance [l]. (HEMTs) have shown However, the power performance of the AlInAdGaInAs channel HEMT has yet to be exploited [2]. The reason is a combination of the lower breakdown voltage in the InGaAs channel and the weak Schottky-barrier height on A M s . On the other hand, the high current densities, due to the large sheet charge density available in the AlInAdGaInAs system make it attractive for millimeter-wave power. Therefore, to optimize the power performance of the AlInAdGaInAs HEMT, the gate barrier height and the breakdown voltage must be improved without sacrificing currcnt density. We present a technology to increase the gatedrain breakdown of AlInAs-GalnAs HEMTs tb record values without substantial impact on other parameters such as Idss and gm. The breakdown in these structures is dependent on the multiplication of electrons injected from the gate (gate leakage) and the source (source cumnt) into the channel. In addition holes are generated by high fields at the drain and arc swept back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. In our approach we have achieved both by incorporating a P+ 2DEG junction as the gate which modulates the 2DEG gas and by utilizing a selective regrowth of the some and drain regions by MOCVD. The l p gate-length devices fabricated show a full channel current of 340 “m, transconductance of 240 mS/mm and record high gate-drain breakdown voltage of 3OV (4;~ = l p ) at lmA/mm gate leakage. This is a substantial increase in breakdown with higher c m n t density over devices previously reprted[3]. The extracted unilateral gain cutsff frequency (fmax) was 75 GHz and the measured current gain cut-off fkquency (ft) was 22GHz. The gate e d drain bias dependence of ft and fmax was measured and will be discussed. [l] [2] [31 *","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124906498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multicolor voltage tunable quantum well infrared photodetector 多色电压可调量子阱红外光电探测器

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009623

H. Liu, Jianmeng Li, J. R. Thompson, Z. Wasilewski, M. Buchanan, J. Simmons

{"title":"Multicolor voltage tunable quantum well infrared photodetector","authors":"H. Liu, Jianmeng Li, J. R. Thompson, Z. Wasilewski, M. Buchanan, J. Simmons","doi":"10.1109/DRC.1993.1009623","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009623","url":null,"abstract":"Using intersubband transitions in quantum wells to produce long wavelength infrared (IR) devices is well known. The most successful example to-day is the quantum well infrared photodetector (QWIP). We present a novel concept of a multicolor QWIP by stacking the usual one-color QWIPs separated by thin (z 100 nm in our test structure) conducting layers. We rely on the highly non-linear and exponential nature of the device dark current-voltage characteristics. This implies that an applied voltage across the entire multistack would be distributed among the one-color QWIPs according to their values of dc resistances. Thus, when the applied voltage is increased from zero, most of the voltage will be dropped across the one-color QWIP with the highest resistance. As the voltage is further increased, an increasing fraction of the voltage will be dropped across the next highest resistance onecolor QWIP, and so on. Since the detector responsivity of a one-color QWIP gradually turns on with applied voltage, we therefore can achieve a multicolor QWIP with spectral response peaks that turn on sequentially with an applied voltage. The bandedge profiles of a three-color version under different bias conditions are schematically shown in Fig. 1.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133069825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Therwally-stable AlGaAs/GaAs microwave power HSTs

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009581

B. Bayraktaroglu, J. Barrette, R. Fitch, L. Kehias, C.I. Huang, R. Neidhard, R. Scherer

引用次数: 0

Monte carlo simulations of p- and n-channel dual-gate Si MOSFETs at the limits of scaling p沟道和n沟道双栅Si mosfet的极限缩放蒙特卡罗模拟

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009568

D. Frank, S. Laux, M. Fischetti

引用次数: 1

Background limited infrared hot-electron transistor at 77K 背景限制红外热电子晶体管在77K

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009624

C. Kuan, D. Tsui, K. Choi, W. Chang, C. Chang, C. Farley

{"title":"Background limited infrared hot-electron transistor at 77K","authors":"C. Kuan, D. Tsui, K. Choi, W. Chang, C. Chang, C. Farley","doi":"10.1109/DRC.1993.1009624","DOIUrl":"https://doi.org/10.1109/DRC.1993.1009624","url":null,"abstract":"The dominant noise of a quantum well infrared photodetector (QWIP) is from the dark current density (JD) and the background photocurrent density (JB). The optimal detector is a background limited photodetector (BLIP, i.e. JB >> JD). For practical applications, the total current density (= JB+JD) must be compatible with the charge handling capacity of the read-out circuit.' The desirable operating temperature of the detector for thermal imaging is 77K. We report a BLIP infrared hot-electron transistor (IHET) with current density compatible with the read-out circuit at 77K. To reduce JD, we have designed a new GaAs/Al,Gal_,As QWIP, in which the aluminum molar ratio of the barriers increases in three steps. This barrier is able to suppress the dark current due to thermally assisted tunneling by providing a thicker effective barrier when the structure is under bias. The remaining J D is also largely eliminated by designing a band pass filter placed adjacent to the QWIP. The IHET is grown by MBE in the following sequence: Emitter -6000-A n' GaAs ( 1 . 2 ~ 1 0 ' ~ ~ m ~ ) ; QWIP -30 periods of 50-A nf-GaAs quantum well (1 .2x101' ~ m ~ ) , and three-step Al,Gal_,As barrier (x=0.28, 0.305, and 0.33; thickness: 161 A, 167 A, and 173 A); Base -300-A n+ Ino.ljGao.8;As and 200-A n+ GaAs ( 1 . 0 ~ 1 0 ' ~ ~ m ~ ) ; Energy band pass filter -40-A Alo.3Gao.~As, 50-A GaAs, 40-8, Alo.3Gao.~As, and 1999-A Alo.25Gao.85As; Collector -1 . l-pm nf GaAs ( 1 . 2 ~ 1 0 ' ~ ~ m ~ ) . At 77K, with VBE up to 2V, the dark current afetr filtering is a t least 10' times smaller than that of the typical QWIP. At VBE = 2V, JD is approximately equal to JB and is within the current limit of the read-out circuit, and %BLIP (= noise current due to JB / total noise current) is 70% under a high photon flux background. The detectivity, Dc* (after filtering) is measured to be 1.0~10'0 c m m / W . At lower bias, Dc* increases and at VBE = l V , Dc8 is","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125793743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

51st Annual Device Research Conference 第51届年度设备研究会议

51st Annual Device Research Conference Pub Date : 1900-01-01 DOI: 10.1109/DRC.1993.1009561

T. N. Jackson, Joe C. Campbell, S. Shichijo, Umesha Mishra, P. Asbeck, Mark S. Lundstrom, S. Chandrasekhar, Loi Nguyen, R. Clarke, D. Rathman, Emmanuel Crabbe, J. Rosenberg, C. Harder, A. Seabaugh, H. Hasegawa, J. Sturm, Takashi Itō, H. Temkin, Tien-Pei Lee, Kang L. Wang

引用次数: 1