MBE regrowth of LEDs on VLSI GaAs MESFETs

Abstract

Summary form only given. The regrowth and monolithic integration of heterostructure light-emitting diodes (LEDs) on fully processed VLSI GaAs MESFETs have been demonstrated. Commercially available, self-aligned VLSI GaAs MESFETs with tungsten-based refractory-metal Schottky gates, nickel-based refractory-metal ohmic contacts, and aluminum interconnection metallization have been shown to be stable after 3 h to 525 degrees C+or-10 degrees C. Thus, it is now possible to regrow optical sources on fully processed MESFET circuitry with lowered-temperature molecular beam epitaxy (MBE). This allows one to build high-density, complex electronic circuitry with optical inputs and optical outputs. Optoelectronic neuron arrays in optical neural networks are considered as an application. >