分子束外延制备掺杂尖峰LWIR PtSi肖特基红外探测器

51st Annual Device Research Conference Pub Date : 1993-06-01 DOI:10.1109/DRC.1993.1009625

T. Lin, J. Park, T. George, E. Jones

{"title":"分子束外延制备掺杂尖峰LWIR PtSi肖特基红外探测器","authors":"T. Lin, J. Park, T. George, E. Jones","doi":"10.1109/DRC.1993.1009625","DOIUrl":null,"url":null,"abstract":"Summary form only given. It is demonstrated that by thinning the p/sup +/ layer to approximately 10 AA, the effective Schottky barrier heights can be reduced without the formation of a potential spike, and, consequently, the undesired tunneling process can be eliminated. Doping-spike PtSi detectors were fabricated on double-side polished Si","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"201 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Doping-spike LWIR PtSi schottky IR detector fabricated by molecular beam epitaxy\",\"authors\":\"T. Lin, J. Park, T. George, E. Jones\",\"doi\":\"10.1109/DRC.1993.1009625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. It is demonstrated that by thinning the p/sup +/ layer to approximately 10 AA, the effective Schottky barrier heights can be reduced without the formation of a potential spike, and, consequently, the undesired tunneling process can be eliminated. Doping-spike PtSi detectors were fabricated on double-side polished Si\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"201 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009625\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

只提供摘要形式。结果表明，通过将p/sup +/层稀释至约10aa，可以降低有效肖特基势垒高度，而不会形成潜在的尖峰，因此可以消除不希望的隧穿过程。在双面抛光的硅片上制备掺杂尖峰型PtSi探测器

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Doping-spike LWIR PtSi schottky IR detector fabricated by molecular beam epitaxy

Summary form only given. It is demonstrated that by thinning the p/sup +/ layer to approximately 10 AA, the effective Schottky barrier heights can be reduced without the formation of a potential spike, and, consequently, the undesired tunneling process can be eliminated. Doping-spike PtSi detectors were fabricated on double-side polished Si

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51st Annual Device Research Conference

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