多色电压可调量子阱红外光电探测器

H. Liu, Jianmeng Li, J. R. Thompson, Z. Wasilewski, M. Buchanan, J. Simmons
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引用次数: 2

摘要

利用量子阱中的子带间跃迁生产长波红外器件是众所周知的。目前最成功的例子是量子阱红外光电探测器(QWIP)。我们提出了一种多色QWIP的新概念,通过堆叠由薄导电层(在我们的测试结构中为z 100 nm)分开的通常的单色QWIP。我们依靠器件的高度非线性和指数性质的暗电流-电压特性。这意味着整个堆叠的外加电压将根据它们的直流电阻值分布在单色qwip之间。因此,当施加的电压从零增加时,大部分电压将在电阻最高的单色QWIP上下降。当电压进一步增加时,电压的增加部分将在下一个最高电阻一色QWIP上下降,以此类推。由于单色QWIP的检测器响应率随外加电压逐渐开启,因此我们可以实现具有随外加电压依次开启的光谱响应峰的多色QWIP。三色版本在不同偏置条件下的条带轮廓如图1所示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multicolor voltage tunable quantum well infrared photodetector
Using intersubband transitions in quantum wells to produce long wavelength infrared (IR) devices is well known. The most successful example to-day is the quantum well infrared photodetector (QWIP). We present a novel concept of a multicolor QWIP by stacking the usual one-color QWIPs separated by thin (z 100 nm in our test structure) conducting layers. We rely on the highly non-linear and exponential nature of the device dark current-voltage characteristics. This implies that an applied voltage across the entire multistack would be distributed among the one-color QWIPs according to their values of dc resistances. Thus, when the applied voltage is increased from zero, most of the voltage will be dropped across the one-color QWIP with the highest resistance. As the voltage is further increased, an increasing fraction of the voltage will be dropped across the next highest resistance onecolor QWIP, and so on. Since the detector responsivity of a one-color QWIP gradually turns on with applied voltage, we therefore can achieve a multicolor QWIP with spectral response peaks that turn on sequentially with an applied voltage. The bandedge profiles of a three-color version under different bias conditions are schematically shown in Fig. 1.
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