High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE

Abstract

Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BV/sub CEO/ and BV/sub CBO/ of >7.5 V and 10.6 V, respectively. The 11 mu m/sup 2/ devices exhibited f/sub T/ of 134 GHz and f/sub max/ of 113 GHz at V/sub CE/=1.57 V and I/sub C/=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources. >