{"title":"高速，高击穿电压的InP/InGaAs双异质结双极晶体管","authors":"H. Chau, E. Beam","doi":"10.1109/DRC.1993.1009590","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BV/sub CEO/ and BV/sub CBO/ of >7.5 V and 10.6 V, respectively. The 11 mu m/sup 2/ devices exhibited f/sub T/ of 134 GHz and f/sub max/ of 113 GHz at V/sub CE/=1.57 V and I/sub C/=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE\",\"authors\":\"H. Chau, E. Beam\",\"doi\":\"10.1109/DRC.1993.1009590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BV/sub CEO/ and BV/sub CBO/ of >7.5 V and 10.6 V, respectively. The 11 mu m/sup 2/ devices exhibited f/sub T/ of 134 GHz and f/sub max/ of 113 GHz at V/sub CE/=1.57 V and I/sub C/=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources. >\",\"PeriodicalId\":310841,\"journal\":{\"name\":\"51st Annual Device Research Conference\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1993.1009590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE
Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BV/sub CEO/ and BV/sub CBO/ of >7.5 V and 10.6 V, respectively. The 11 mu m/sup 2/ devices exhibited f/sub T/ of 134 GHz and f/sub max/ of 113 GHz at V/sub CE/=1.57 V and I/sub C/=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources. >
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