2009 International Symposium on VLSI Technology, Systems, and Applications最新文献_第2页

Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation 无成形HfO2双极RRAM器件，提高了耐用性和高速运行

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159281

Yu-Sheng Chen, T. Wu, P. Tzeng, Pang-Shiu Chen, Heng-Yuan Lee, Cha-Hsin Lin, Frederick T. Chen, M. Tsai

引用次数: 38

Highly performant FDSOI pMOSFETs with metallic source/drain 高性能FDSOI pmosfet与金属源/漏

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159304

T. Poiroux, M. Vinet, F. Nemouchi, V. Carron, Y. Morand, B. Previtali, S. Descombes, L. Tosti, O. Cueto, L. Baud, V. Balan, M. Rivoire, S. Deleonibus, O. Faynot

引用次数: 3

A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET 一种新的带间隧道仿真鲁棒非局部算法及其在隧道场效应管中的应用

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159316

C. Shen, L. T. Yang, E. Toh, C. Heng, G. Samudra, Y. Yeo

引用次数: 49

Scaling challenges of MOSFET for 32nm node and beyond 32纳米及以上节点MOSFET的缩放挑战

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159296

Y. Nara

引用次数: 12

The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET CMOS技术的器件架构困境:finFET相对于平面MOSFET的机遇与挑战

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159300

B. Parvais, A. Mercha, N. Collaert, R. Rooyackers, I. Ferain, M. Jurczak, V. Subramanian, A. De Keersgieter, T. Chiarella, C. Kerner, L. Witters, S. Biesemans, T. Hoffman

引用次数: 34

Carrier transport and stress engineering in advanced nanoscale MOS transistors 先进纳米MOS晶体管中的载流子输运和应力工程

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159267

K. Uchida, M. Saitoh

引用次数: 3

A novel double-gated nanowire TFT and investigation of its size dependency 一种新型双门控纳米线TFT及其尺寸依赖性研究

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159320

Wei-Chen Chen, Chuan-Ding Lin, Horng-Chih Lin, Tiao-Yuan Huang

引用次数: 3

A comparison study of Silicon Nanowire Transistor with Schottky-Barrier source/drain and doped source/drain 具有肖特基势垒源/漏极与掺杂源/漏极硅纳米线晶体管的比较研究

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159326

Zhaoyi Kang, Liangliang Zhang, Runsheng Wang, Ru Huang

引用次数: 1

Fermi level depinning for the design of III–V FET source/drain contacts 用于III-V型场效应管源极/漏极触点设计的费米能级计算

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159321

Jenny Hu, X. Guan, D. Choi, J. Harris, K. Saraswat, H. Wong

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引用次数: 4

22nm CMOS approaches by PVD TiN or Ti-Silicide as metal gate 采用PVD TiN或ti -硅化物作为金属栅极的22nm CMOS方法

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI: 10.1109/VTSA.2009.5159292

C.S. Liu, G. Boccardi, H.Y. Wang, C. Lin, J. Pétry, M. Muller, Z. Li, C. Zhao, C. Yu

引用次数: 2