Carrier transport and stress engineering in advanced nanoscale MOS transistors

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159267

K. Uchida, M. Saitoh

引用次数: 3

Abstract

This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Sub-band structure engineering to enhance mobility as well as ballistic current is also examined.

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先进纳米MOS晶体管中的载流子输运和应力工程

本文综述了先进纳米mosfet的载流子输运机制和应力工程。首先，载流子运输散装(100)和(110)mosfet进行了审查。子带结构工程，以提高流动性和弹道电流也进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 International Symposium on VLSI Technology, Systems, and Applications

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