C.S. Liu, G. Boccardi, H.Y. Wang, C. Lin, J. Pétry, M. Muller, Z. Li, C. Zhao, C. Yu
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22nm CMOS approaches by PVD TiN or Ti-Silicide as metal gate
Two SMSD gate first planar CMOS devices were demonstrated. Vtn/Vtp= +0.49V/−0.48V were achieved by adjusting TiN to p-like metal and As I/I on nMOS. This enables the equivalent +/−0.2V low Vt target of N22 fully depleted CMOS technologies. Vtn/Vtp= 0.52/− 0.55 were obtained by transforming PVD-TiN/Ti into n-like metal TiN/TiSix for nMOS and by Al I/I on TiN/Ti for pMOS. Al diffusion was facilitated by snowplow effect of TiSix formation on pMOS. As low as 7.3A EOT with decent Jg 6.4E-3 A/cm2 @1.1Vwas obtained.
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