Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation

Abstract

A forming-free resistive memory of TiN/Ti/HfO2/TiN with a thin HfO2 film is demonstrated. The as-fabricated device can be operated without additional forming step to initiate the operation. This device with bipolar operation mode shows high speed (∼ 10 ns), robust endurance (≫ 106 times), good data retention (10-year lifetime), enough resistance ratio, and low power consumption. The simple structure and capability of multi-level operation demonstrate RRAM as a high-density memory in the near future.