22nm CMOS approaches by PVD TiN or Ti-Silicide as metal gate

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159292

C.S. Liu, G. Boccardi, H.Y. Wang, C. Lin, J. Pétry, M. Muller, Z. Li, C. Zhao, C. Yu

引用次数: 2

Abstract

Two SMSD gate first planar CMOS devices were demonstrated. Vtn/Vtp= +0.49V/−0.48V were achieved by adjusting TiN to p-like metal and As I/I on nMOS. This enables the equivalent +/−0.2V low Vt target of N22 fully depleted CMOS technologies. Vtn/Vtp= 0.52/− 0.55 were obtained by transforming PVD-TiN/Ti into n-like metal TiN/TiSix for nMOS and by Al I/I on TiN/Ti for pMOS. Al diffusion was facilitated by snowplow effect of TiSix formation on pMOS. As low as 7.3A EOT with decent Jg 6.4E-3 A/cm2 @1.1Vwas obtained.

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采用PVD TiN或ti -硅化物作为金属栅极的22nm CMOS方法

演示了两种SMSD栅极首平面CMOS器件。通过在nMOS上将TiN调整为类p金属和As I/I，得到Vtn/Vtp= +0.49V/−0.48V。这使得N22完全耗尽CMOS技术的等效+/−0.2V低Vt目标成为可能。nMOS用PVD-TiN/Ti转化成类n金属TiN/TiSix, pMOS用Al I/I在TiN/Ti上转化得到Vtn/Vtp= 0.52/−0.55。在pMOS上形成TiSix的雪犁效应促进了Al的扩散。EOT低至7.3A, Jg为6.4E-3 A/cm2 @1.1 v。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 International Symposium on VLSI Technology, Systems, and Applications

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