一种新型双门控纳米线TFT及其尺寸依赖性研究

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159320

Wei-Chen Chen, Chuan-Ding Lin, Horng-Chih Lin, Tiao-Yuan Huang

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引用次数: 3

摘要

提出了一种制备多栅极多晶硅纳米线TFT的简单方法，并对其进行了表征。在这种结构中，NW主要是通过各向异性和高选择性各向同性等离子体蚀刻形成的。研究发现，当NW的尺寸减小时，双门控操作提供了更大的改善。此外，利用这种独特的独立双门控结构，研究了阈值电压调制的功能。

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A novel double-gated nanowire TFT and investigation of its size dependency

A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.

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来源期刊

2009 International Symposium on VLSI Technology, Systems, and Applications

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