Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第9页

Arsenic dimer implants for shallow extension in 0.13μm logic devices 用于0.13 μ m逻辑器件浅层扩展的砷二聚体植入物

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257951

B. Chang, J. Chang, A. Agarwal, M. Ameen, R. Reece, H. Chen, D. Chien, C. Tsai, M. Tsai, C. Weng, D. Wu, C. Yang

引用次数: 1

An enhanced 100nm CMOS logic technology with germanium preamorphized PMOS 基于锗预非晶化PMOS的100nm CMOS逻辑增强技术

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257940

S.T.H. Chan, F. Benistant, A. Al-Bayati

引用次数: 0

Gas cluster ion beam processing equipment 气簇离子束加工设备

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258094

J. Bachand, A. Freytsis, E. Harrington, M. Gwinn, N. Hofmeester, J. Hautala, M. Mack, K. Regan

引用次数: 1

In-line measurement of Xj on 300 mm wafers 在300mm晶圆上在线测量Xj

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257965

S. Corcoran, P. Gillespie, M. Segovia, P. Borden

引用次数: 1

Charging effects on medium current implanter on CMOS and mixed signal IC's CMOS和混合信号集成电路中电流注入器的充电效应

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257998

T. Gandy, V. Sargūnas, A. Singh, S. Taduri, P. Thiefain, M. Ameen, R. Rathmell

{"title":"Charging effects on medium current implanter on CMOS and mixed signal IC's","authors":"T. Gandy, V. Sargūnas, A. Singh, S. Taduri, P. Thiefain, M. Ameen, R. Rathmell","doi":"10.1109/IIT.2002.1257998","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257998","url":null,"abstract":"Stringent process performance requirements for advanced devices have led to hardware specifically optimized for low metal contamination and particle contribution during implants and wafer handling. Electrostatic chucks (ESC) serve this purpose particularly well in single wafer processing machines in that the area of the wafer holder exposed to the beam can be nearly completely eliminated. One potential disadvantage of this is that secondary electrons are no longer generated in the wafer vicinity to neutralize the beam. Wafer charging was observed for certain implant levels for CMOS and mixed signal integrated circuits, implanted on an Axcelis 8200/8250 medium current implanter with the Electrostatic Chuck using no electron shower for beam neutralization. The charging effects were manifested as blowouts/arcing defects on the silicon surface, as verified by in-line defectivity metrology. Depressed yield was also observed for the wafers impacted by the charging problem even in the case with no visible in-line defectivity. The charging intensity and resulting extent of damage was found to vary with beam current. Addition of secondary electron shower module to provide charge control is shown to eliminate the problem. Wafer charging in response to various settings of electron shower primary current is discussed by review of in-line defectivity/silicon damage measurements and end of the line yield data. Equipment and process optimizations to improve system performance and stability are summarized.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122349828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Optimization of high tilt pocket implant process for improving deep sub-micro PMOS device sensitivity 提高深亚微PMOS器件灵敏度的高倾角口袋植入工艺优化

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257926

Kun-Yang Yeh, M. Chiang, C. Tsai, Y. L. Wang, J. K. Wang

引用次数: 1

Photoresist wafer processing with the SWIFT ion implanter SWIFT离子注入器的光刻胶晶圆加工

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257999

K. Mast, R. Low, D. Knowles, M. Junker

引用次数: 0

Impact of tilt angle variation on device performance 倾斜角度变化对设备性能的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257934

D. Lenoble, F. Wacquant, E. Josse, F. Arnaud

{"title":"Impact of tilt angle variation on device performance","authors":"D. Lenoble, F. Wacquant, E. Josse, F. Arnaud","doi":"10.1109/IIT.2002.1257934","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257934","url":null,"abstract":"The control of tilt/twist angles during ion implantation process is becoming one the most challenging issue for future CMOS technologies. The continuous shrink of CMOS device dimensions imposes an accurate dopant placement within the transistor architecture. Moreover, improvement in the packing density increases the shadowing impact of resist patterns, leading to the use of quasi-vertical implants. In this paper, we propose to experimentally determine the sensitivity of standard electrical parameters of advanced technologies, sub-0.13-μm, to tilt angle variations that may occur within a wafer, within a lot, or lot to lot. Critical implants such as the high tilt implants (pockets) are studied for pMOS and nMOS transistors. Nominal results, obtained with the nominal tilt angle, are compared to the electrical results (threshold voltage, Ion/Ioff, Short Channel Effects...) obtained for a modified tilt angle (+/-3°). Curves of sensitivity are then extracted. As a conclusion, specifications for the angle accuracy are proposed in order to insure a perfect matching of the device performance whatever the tilt angle discrepancies are.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127953325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective silicon processing for advanced ultra shallow junction engineering 先进超浅结工程的选择性硅加工

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257946

L. Scudder, A. Al-Bayati

引用次数: 2

Advantages of single and mixed species chaining for high productivity in high and mid-energy implantation 单种和混合种连锁在高中能植入中高产率的优势

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257966

S. Nitodas, M. Ameen, L. Rubin

{"title":"Advantages of single and mixed species chaining for high productivity in high and mid-energy implantation","authors":"S. Nitodas, M. Ameen, L. Rubin","doi":"10.1109/IIT.2002.1257966","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257966","url":null,"abstract":"Chaining implant steps improve device performance and yield, enhance throughput, and reduce manufacturing time, cost and risk. A typical implant chain consists of two to four steps of varying energy, dose and Implant angle, and may also include multiple species. High-energy (HE) well implants, including threshold voltage (Vt) adjusts, are Ideal candidates for chaining due to their location in the process flow, similarity in mask sets, and beam current requirements. In the present study, we prove feasibility of same species\"\" and \"\"mixed species\"\" chains with high throughput in multi-wafer ion implanters. Throughput models have been generated to examine how mixed species chains improve machine productivity. Optimization of chains is achieved through characterization of the hardware and optimization of the software to allow for flexibility In setting up and running chains. Measurements of energetic and surface contamination in the mixed species chains demonstrate the implanter's capability of running chains without any contamination problems. Results on tune/transition times between chain recipes are presented, and subsequent throughput enhancements are discussed.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124020291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1