{"title":"Capacity increase for existing Varian EHP220 and EHP500 implanters","authors":"K. Ali","doi":"10.1109/IIT.2002.1258052","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258052","url":null,"abstract":"Wafer throughput is of great importance to the semiconductor production facility. The problems of financial and spatial considerations magnified by aging fabs and industry downturns are directing focus to improving existing capacity and away from purchasing new tools. Wafer handler hardware upgrades, software upgrades, and improved operation procedures were implemented on three Varian EHP-220 implanters and one EHP-500 implanter to achieve higher capacity. This was accomplished without adversely affecting implant process parameters, tool uptime, or product uniformity. This paper presents two stages of improvements along with the data for corresponding increase in tool capacity and retention of tool and process reliability.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124127724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Campbell, J. Cummings, R. Lindberg, J. Olson, S. Radovanov, D. Smatlak
{"title":"Beam angle control on the VIISta 80 ion implanter","authors":"C. Campbell, J. Cummings, R. Lindberg, J. Olson, S. Radovanov, D. Smatlak","doi":"10.1109/IIT.2002.1257971","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257971","url":null,"abstract":"Advanced integrated circuit design requires precise control of beam incidence angle. This requirement has led to the development of an automated angle control system on Varian Semiconductor's high current VIISta 80 ion implanter. In this paper we show beam incidence angle and angular spread measurements for 200 and 300 mm ion beams on the VIISta 80 ion implanter. Multiple beam measurements are sampled across the wafer plane for each beam setup. Beam angle computation results are compensated for prior to wafer implantation for optimal incident angle control. Beam, bare wafer and device performance data were used to confirm the accuracy of this measurement and control system. Excellent measurement accuracy and repeatability has been demonstrated. Data will be shown which includes arsenic, boron and phosphorus implants from both drift and decel operation. Benefits and process differences will be shown with active beam angle correction as compared to classical open loop methods. Mechanical tilt angle accuracy, repeatability and verification data will also be discussed.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123433474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Frederic Sahores, D. Lenoble, F. Labrado, B. Baylac
{"title":"Investigation of phosphorus contamination in 49BF2+ implants","authors":"Frederic Sahores, D. Lenoble, F. Labrado, B. Baylac","doi":"10.1109/IIT.2002.1258006","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258006","url":null,"abstract":"For the source drain doping, <sup>49</sup>BF<sub>2</sub><sup>+</sup> implants may be used. Statistical follow-up of this process step on devices showed a 10% under dosing linked to a specific implanter. For investigating the origin of this issue, several physical (SIMS analysis, mass spectrum analysis) and electrical (sheet resistance measurements) characterizations have been performed. The results are presented in details in this paper and the analysis of these experiments demonstrates the capability of phosphorus to be a cross-contaminant of <sup>49</sup>BF<sub>2</sub><sup>+</sup> implants. Experiments showed that for <sup>49</sup>BF<sub>2</sub><sup>+</sup> implantations, <sup>31</sup>P<sup>+</sup> could be energetically coimplanted: <sup>31</sup>P<sup>+</sup> passes the mass resolution as a <sup>50</sup>PF molecule and afterwards is dissociated when the species is implanted. In conclusion, some recommendations are given for monitoring, solving and controlling this specific problem, which may significantly impact electrical characteristics of the devices.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121995765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yupu Li Yupu Li, J. Shyue, J. Hunter, B. McComb, M. Chun, R. Doherty, M. Foad
{"title":"SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon","authors":"Yupu Li Yupu Li, J. Shyue, J. Hunter, B. McComb, M. Chun, R. Doherty, M. Foad","doi":"10.1109/IIT.2002.1258083","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258083","url":null,"abstract":"There is a notable trend for formation of shallower dopant profiles: i.e. the use of heavier ions, such as Sb and In at relative higher energies (vs. As or 11B) to make shallow dopant profiles. In the work, the 121Sb depth profiles and irradiation damage of Si wafers implanted with low energies Sb ions were studied by secondary ion mass spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), and simulation by the program of the stopping and range of ions in matter (SRIM). (100) Si wafers were implanted with 10 to 50keV 121Sb ions to a dose of 1e14 or 1e13 atoms/cm2. For the 10keV Sb implanted wafer, analysis by SIMS shows that an Sb doped layer was built up in Si, with the implanted peak at 9.7nm. The damaged peak simulated by SRIM program is located at a depth of 69% of the implanted Sb peak. By combining the XTEM observation and SRIM simulation it has been found that a dpa (displacement per atom during the irradiation) level of > 0.29 resulted in amorphization of the implanted layer. In other words, the critical dpa level for amorphizing Si by Sb ions is 0.29. Analyses by XTEM show that a lower damage level with a simulated dpa level of <0.065 only resulted in some strain and point defects associated contrast in the implanted layer. XTEM analyses also show that the low irradiation damage to a dpa level of 0.065 can be essentially removed by RTP (Rapid Thermal Processing) annealing at 1050°C for 30 seconds, while the SIMS Sb depth profile showing less obvious change.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122511106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Doping challenges in exploratory devices for high performance logic","authors":"E. Jones","doi":"10.1109/IIT.2002.1257924","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257924","url":null,"abstract":"This paper presents an outlook for doping processes in high performance logic as new device structures and materials are introduced with the hope of continuing CMOS device performance improvements into the 10-20 nm channel length regime. Materials and structures that are considered interesting in this scaling work are strained silicon and strained silicon grown on silicon germanium, ultra thin silicon on insulator (SOI) materials, high-k dielectrics and metal gates, and double gated MOSFETs. Ramifications of using these materials on implant and doping technologies will be discussed.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"12 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132595427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Cluster ion beam processing - METI/NEDO projects and recent progress $","authors":"I. Yamada, J. Matsuo, N. Toyoda","doi":"10.1109/IIT.2002.1258092","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258092","url":null,"abstract":"Since the initial study of gas cluster ion beams (GCIB) was started in the Ion Beam Engineering Experimental Laboratory of Kyoto University, more than 15 years have passed. Some of the results of that study have already been applied for industrial use. Unique characteristics of gas cluster ion bombardment have been found to offer potential for various other industrial applications. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not associated with the impacts of atomic ions. Among prospective applications for these effects are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130799880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Yamashita, N. Miyamoto, K. Miyabayashi, T. Nagayama
{"title":"Cleaning procedure for indium implantation","authors":"T. Yamashita, N. Miyamoto, K. Miyabayashi, T. Nagayama","doi":"10.1109/IIT.2002.1258039","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258039","url":null,"abstract":"Indium implantation in a medium current ion implantation becomes a common requirement for the next generation VLSI fabrication. It is essential to keep high utilization rate of equipment to reduce the cost of VLSI fabrication. As for a medium current ion implanter, running all ion species including indium ion in one machine is the solution to keep high utilization rate of the machine. To use the indium ion with other ion species in a medium current ion implanter, it is necessary to control the cross contamination of the indium when implantation other ion species. In this paper, experimental data of the indium cross contamination at B, P, As implantation is reviewed and effective cleaning procedure to reduce cross contamination and other side effects of indium usage is reported.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"12 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134547939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Crystal fracture induced by decorating of postimplantation defects: Silicon layer delamination","authors":"A. Usenko, W. Carr, B. B. Bo Chen","doi":"10.1109/IIT.2002.1258087","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258087","url":null,"abstract":"We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132509165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei-Kan Chu Wei-Kan Chu, Lin Shao Lin Shao, J. Liu, P. Thompson, X. Wang, H. Chen
{"title":"Ultra-shallow junction formation by Point Defect Engineering","authors":"Wei-Kan Chu Wei-Kan Chu, Lin Shao Lin Shao, J. Liu, P. Thompson, X. Wang, H. Chen","doi":"10.1109/IIT.2002.1257935","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257935","url":null,"abstract":"Point Defect Engineering (PDE) using high-energy ion bombardment can be used as a method to inject vacancies near the surface region with excessive interstitials created near the end of the projected range deep inside the substrate. We demonstrate that PDE not only suppresses transient enhanced diffusion of B in Si caused by implantation-induced defects, but also suppresses boride-enhanced diffusion normally associated with a high B concentration layer. With PDE, we can retard B diffusion, sharpen boron profile and increase B activation. An enhancement of substitutional ratio of B was observed by aligned nuclear reaction analysis. By drive-in diffusion of B from a surface deposited layer, the concept of boron diffusion control was used as an approach to form sub-10 nm ultrashallow junctions in Si.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"26 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114041031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A compact model for the simulation of ion implantation","authors":"K. Andreas","doi":"10.1109/IIT.2002.1258067","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258067","url":null,"abstract":"The use of computer simulation for ion implantation helps for a basic understanding of the interaction of the ion with the target as well as for faster development and improvement of semiconductor devices. A model for the transport of ions in a crystalline target material is introduced. Applying Monte Carlo statistics on this model, distributions of ions in the target, crystal damage, and temperature during implant in space and time can be calculated. Channeling is taken into account by the model, crystal damage by lattice distortion. The results of a computer implementation of the model are in good agreement with SIMS measurements and demonstrate the flexibility of the model for complex structures and implant situations.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115014192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}