Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第7页

Process performance for Virtual Slot Disk/Triple Surface Disk Faraday on a multi-wafer high current ion implantation system 虚拟槽盘/三面盘法拉第在多晶圆高电流离子注入系统上的工艺性能

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258035

H. Lee, S. Mikkilineni, R. Knerr, M. Harris, J. Chow, P. Kopalidis, M. Ameen

{"title":"Process performance for Virtual Slot Disk/Triple Surface Disk Faraday on a multi-wafer high current ion implantation system","authors":"H. Lee, S. Mikkilineni, R. Knerr, M. Harris, J. Chow, P. Kopalidis, M. Ameen","doi":"10.1109/IIT.2002.1258035","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258035","url":null,"abstract":"The process performance of a reduced area disk with a variable strike plate faraday to control cross contamination and auto-doping in multi-wafer high current ion implanters is reported. The Virtual Slot Disk (VSD)/Triple Surface Disk Faraday (TSDF) hardware combination is designed to significantly reduce surface cross contamination, while maintaining real-time dose control. The VSD reduces the surface area of the disk from which to sputter contaminants, and the TSDF dedicates strike surfaces for specific implant species to eliminate potential surface cross contamination from the faraday. Using this configuration, cross contamination of phosphorus in arsenic implants was reduced by over a factor of three compared to a solid disk assembly. A description of the basic system configuration along with the results of the process qualification is presented here. The process qualification focused on surface cross contamination, transition metals and aluminum contamination, and dosimetry performance, as measured by Rs. In addition, other items were checked (functionality, wafer cooling, charging) to ensure compliance with product specifications. A specific study of surface cross contamination during heavy phosphorus operation was done to investigate the need for dedicated tools sensitive to this type of contamination.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132514863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Characterization of boron and phosphorus surface contamination in high current ion implantation 大电流离子注入中硼磷表面污染的表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257967

J. Bernstein, A. W. Alvarez, E. B. Benton, K. Cherukuri, C. Otten

引用次数: 1

Successful integration of in-situ particle monitoring into a volume 300mm high current implant manufacturing system 成功将原位颗粒监测集成到300mm大电流植入物制造系统中

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258004

J. Simmons, M. Scottney-Castle, C. Maskiell, J. Lumpkin

引用次数: 3

Characterization and environmental impact of plasma products within an ion implanter 离子注入器内等离子体产物的表征和环境影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258043

H. Zarrug, J. Mefo, B. Sealy, G. Boudreault, C. Jeynes, R. Webb, K. Kirkby, E.J.H. Collart

{"title":"Characterization and environmental impact of plasma products within an ion implanter","authors":"H. Zarrug, J. Mefo, B. Sealy, G. Boudreault, C. Jeynes, R. Webb, K. Kirkby, E.J.H. Collart","doi":"10.1109/IIT.2002.1258043","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258043","url":null,"abstract":"The way in which the plasma in the ion source interacts with the constituent elements of the source chamber can provide important insights into the plasma chemistry and may facilitate improvements in ion source design and operation. It is also an important parameter in determining the environmental impact of the implantation process. It is worth noting that less than 0.4% of the material placed into the ion source is actually implanted as a dopant into the target wafers; the rest remains as a solid residue or gaseous emission. As many of the materials used for dopant implantation are either highly toxic, pyrophoric, greenhouse gases or powerful ozone depleters, or combinations of the above it is imperative, that the extent, location and chemical composition of these residues are quantified and understood. This will enable their impact on the environment, economy and society, the three pillars of sustainable development to be assessed. In this study small pieces of silicon were placed at predetermined points within the source chamber of a commercial ion implantation system. Antimony was then run using SbF3 as the feed gas. At the end of the run the silicon samples were retrieved and analysed using Rutherford Backscattering (RBS) and ion channelling. It was found that the location of the samples influenced the elemental composition of the plasma products deposited in the source chamber. A similar experiment was also conducted for BF2+ implants using a BF3 feed gas, again the elemental composition varied with the position of the silicon samples allowing the distribution of different elements, within the plasma products, to be mapped around the source chamber.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134086394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated implant-RTP process monitor using solid phase epitaxy activation 采用固相外延激活的集成植入物- rtp过程监控

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257979

S. Mackinnon, G. Batinica, S. Clayton, O. Csanadi

引用次数: 0

Negative-ion implantation into thin SiO2 film on Si and formation of silver nanoparticles in the film 负离子注入到硅上的SiO2薄膜中，并在薄膜中形成银纳米粒子

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258099

J. Ishikawa, H. Tsuji, Masanori Motono, Y. Gotoh, N. Arai, K. Adachi, H. Kotaki

{"title":"Negative-ion implantation into thin SiO2 film on Si and formation of silver nanoparticles in the film","authors":"J. Ishikawa, H. Tsuji, Masanori Motono, Y. Gotoh, N. Arai, K. Adachi, H. Kotaki","doi":"10.1109/IIT.2002.1258099","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258099","url":null,"abstract":"Ag nanoparticles with diameter about 3 nm were formed in center region of 50-nm-thick SiO2 thin film on Si substrate by silver negative-ion implantation. These metal nanoparticles are expected their application to single electron devices. Silver negative ions were implanted with 30 keV into a 50-nm-thick SiO2 film on Si with various doses, and with subsequent annealing. Optical reflection properties showed the formation of Ag nanoparticles in the film. The state of nanoparticles in the thin oxide film was observed by a cross-sectional scanning TEM. The sample of 1 × 1015 ions/cm2 showed nanoparticles with diameter of about 2 - 3 nm distributed in the center of the SiO2 film on Si. The location of nanoparticles was in good agreement with the calculated profile by TRIM-DYN, Various size in 4 - 8 nm in diameter of nanoparticles were formed in samples of 1 × 1016 and 1 × 1017 ionS/cm2. In the I-V characteristics measured at room temperature for the sample (1 × 1015 implanted and 700°C annealed), clear steps with voltage width of 0.10 - 0.12 V were observed. These Coulomb blockade voltages correspond to the nanoparticle with diameter of 2 - nm. This result well agreed with The TEM observation.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"17 29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133509117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Meeting the well doping requirement of sub 100nm devices - process performance characteristics of the VIISta 3000 implanter 满足亚100nm器件的良好掺杂要求——VIISta 3000植入器的工艺性能特点

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258059

S. Norasetthekul, B. Guo, J. Flanagan, N. Variam, S. Mehta

引用次数: 3

Optimizing p-type ultra-shallow junctions for the 65 nm CMOS technology node 优化65纳米CMOS技术节点的p型超浅结

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257928

B. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, X. Pagès

引用次数: 15

Design issues in gas cluster ion beamlines 气团离子束的设计问题

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258093

M. Mack, Robert K. Becker, M. Gwinn, D. Swenson, R. Torti, R. Roby

引用次数: 4

Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents 利用低场隧道电流研究薄栅氧化物中植入缺陷

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257972

M. Jank, L. Frey, A. Bauer, H. Ryssel

引用次数: 0