Meeting the well doping requirement of sub 100nm devices - process performance characteristics of the VIISta 3000 implanter

As device geometries scale, there is an Increasing requirement for a tight control of all process parameters related to doping. In order to enable the high packing density and reduced well-spacing, zero angle well implants are required. This transition is fueled by the necessity to eliminate limitations imposed by shadowing and encroachment effects stemming fro the thick photoresist mask, inherent to traditional off-axis we implants. However, the zero degree implants require a tight control of beam angles and parallelism to ensure consistent device performance across the wafer. In this paper we discuss the performance characteristics of VSEA's VIISta 3000, single-wafer parallel beam, high-energy ion implanter. The angle control and beam parallelism are demonstrated with implants over a wide energy range and for dopant applications such as well and halo implants. In addition, the reliability of VIISta 3000 from defect control perspective relevant to advanced device geometries is discussed.