Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献

Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts 簇离子辐照下硅表面的计算机建模和电子显微镜研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 2003-04-01 DOI: 10.1109/IIT.2002.1258069

Z. Insepov, L. Allen, C. Santeufemio, K. Jones, I. Yamada

引用次数: 20

Characterisation of low energy antimony (2-5 keV) implantation into silicon 低能锑(2-5 keV)注入硅的表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 2002-10-01 DOI: 10.1109/IIT.2002.1257960

E. Collart, D. Kirkwood, J. A. Van den Berg, M. Werner, W. Vandervorst, B. Brijs, P. Bailey, T. Noakes

引用次数: 1

Construction and performance of a bench-top mapping positron alpha tool 台式正电子映射工具的构建和性能

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 2002-09-01 DOI: 10.1109/IIT.2002.1258010

P. Coleman, C. P. Burrows, A. Knights, B. Sealy, R. Gwilliam

引用次数: 0

Sputtering of Si with decaborane cluster ions 硅与十硼烷簇离子的溅射

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 2002-01-25 DOI: 10.1109/IIT.2002.1258072

M. Sosnowski, M. Albano, Cheng Li, H. Gossmann, D. Jacobson

引用次数: 3

High accuracy and rapid dose measurements for ultra-low energy ion implantation using low energy x-ray emission spectroscopy 利用低能x射线发射光谱进行超低能离子注入的高精度、快速剂量测量

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257964

S. Corcoran, C. Hombourger, P. Staub, M. Schuhmacher

{"title":"High accuracy and rapid dose measurements for ultra-low energy ion implantation using low energy x-ray emission spectroscopy","authors":"S. Corcoran, C. Hombourger, P. Staub, M. Schuhmacher","doi":"10.1109/IIT.2002.1257964","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257964","url":null,"abstract":"This paper reports on the development and use of low energy x-ray emission spectroscopy (LEXES) for non-destructive dosimetry of low energy ion implants. Secondary Ion Mass Spectrometry (SIMS) is often considered the technique of choice for ion implant characterization. Unfortunately, SIMS measurements are time consuming and often require multiple measurements to build statistical confidence in the data. In addition, the complex surface ion yield transients-a fact of life in SIMS-can only be addressed by careful analytical protocols which add to the complexity of the analysis. Low energy high dose implants result in very high dopant concentrations (10%) in the first few nanometers that can compromise the quantitative accuracy of SIMS. LEXES is relatively immune to such matrix effects. For ion implant dosimetry, tool matching and wafer mapping, the LEXES technique will be shown to provide a greater than 10× improvement in throughput compared to SIMS for B, P, As and Ge. Repeatability for LEXES will be shown to be <1% for acquisition times of 1-8 minutes across a range of technologically relevant implant conditions.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121808583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Ellipsometric characterization of shallow damage profiles created by Xe-implantation into silicon 硅中氙注入形成的浅损伤曲线的椭圆偏振表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258077

P. Petrik, O. Polgár, T. Lohner, M. Fried, N. Q. Khánh, J. Gyulai, E. Ramadan

{"title":"Ellipsometric characterization of shallow damage profiles created by Xe-implantation into silicon","authors":"P. Petrik, O. Polgár, T. Lohner, M. Fried, N. Q. Khánh, J. Gyulai, E. Ramadan","doi":"10.1109/IIT.2002.1258077","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258077","url":null,"abstract":"Shallow damage profiles created by Xe-implantation into Si were characterized using spectroscopic ellipsometry (SE). 100 keV Xe ions with doses ranging from 1 × 1013 to 1.6 × 1014 cm-2 caused damage peaks at about 30 nm from the surface. The SE measurement is based on the fact that the ion implantation induced disorder changes the complex refractive index of the implanted material, therefore, it can be measured by optical methods. Because SE is an indirect technique, the sample properties are determined using proper optical models, and parameter fitting. The optical models and the fitting algorithms are crucial for getting reliable results. In this study we also present improved models and algorithms for the evaluation of the SE spectra. In the improved model the thicknesses of the sublayers are automatically calculated from the four parameters of the coupled half-Gaussian profile, while the number of the layers are held constant. This ensures that the calculation time does not increase when using the improved optical model. A new fitting algorithm, which we call multi point random search, was applied to minimize the probability of getting in a local minimum. The improved fit quality and the results from Rutherford backscattering spectrometry measurements used as cross-checking basically supported the new optical model.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117146443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ultrashallow P+/N junctions using BCl2+ implantations for sub 0.1 μm CMOS devices 使用BCl2+植入的超中空P+/N结，用于低于0.1 μ m的CMOS器件

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257948

C. Laviron, F. Milési, G. Mathieu

{"title":"Ultrashallow P+/N junctions using BCl2+ implantations for sub 0.1 μm CMOS devices","authors":"C. Laviron, F. Milési, G. Mathieu","doi":"10.1109/IIT.2002.1257948","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257948","url":null,"abstract":"Boron and more recently BF2 implantation are commonly used in production to achieve ultra shallow P+/N junctions. Very low energy implantation is needed for Boron and then specific ultra low energy implanters are necessary. Several studies have shown that Fluorine enhances Boron diffusion through the gate oxide and then BF2 is not so favorable. BCl2 implantation showed the interest of its high atomic mass to get shallow Boron as implanted profile, so that higher energy is needed to achieve the same depth. In this paper we show the implementation of the BCl2+ implantation process on a medium current implanter. BCl2 have been implanted with energies from 8 keV down to 3 keV with doses of 5e13 to 1e15 at/cm2. Such kind of implantation energy is equal to a 1.1 keV down to 400 eV Boron implant equivalent energy and p+/n junction can reach the 50nm ITRS node. SIMS characterizations combined with sheet resistance 4-point probe measurements shows very interesting result in terms of Xj vs. Rs criteria for the junction. Polysilicon gate implantation has also been done to look at the chlorine effect on Boron diffusion through the gate oxide. Defect in c-Si injected during implantation step is much higher with the high effective mass of this cluster ion, and amorphisation occurs with doses close to 2e14 at/cm2. Therefore the annealing step is regarded as a key point to restrict the Boron diffusion. Spike anneal activation as well as curing furnace anneal are also addressed here for BCl2.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124723118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

NEXAFS study of DLC films prepared by Ar cluster and monomer ion assisted deposition Ar团簇和单体离子辅助沉积制备DLC膜的NEXAFS研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258073

T. Kitagaw, K. Miyauchi, N. Toyoda, K. Kanda, S. Matsui, H. Tsubakino, J. Mastuo, I. Yamada

引用次数: 1

The use of laser annealing to reduce parasitic series resistances in MOS devices 利用激光退火技术降低MOS器件中的寄生串联电阻

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257937

Y. Takamura, Eun-Ha Kim Eun-Ha Kim, S.H. Jain, P. Griffin, J. Plummer

引用次数: 1

Gold nanoclusters formation in silicon carbide using ion implantation 离子注入在碳化硅中形成金纳米团簇

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258104

X. Blanchet, I. Muntele, C. Muntele, D. Ila

引用次数: 0