低能锑(2-5 keV)注入硅的表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 2002-10-01 DOI:10.1109/IIT.2002.1257960

E. Collart, D. Kirkwood, J. A. Van den Berg, M. Werner, W. Vandervorst, B. Brijs, P. Bailey, T. Noakes

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引用次数: 1

摘要

低能锑植入物(2 keV和5 keV)在n型超浅结形成中具有潜在的应用前景。利用二次离子质谱法(SIMS)获得的深度剖面与介质能量离子散射(MEIS)获得的薄片电阻数据和损伤分布数据相结合。

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Characterisation of low energy antimony (2-5 keV) implantation into silicon

Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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