Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第10页

Impact of energy contamination of ultra-low energy implants on sub-0.1-μm CMOS device performance 超低能植入物的能量污染对0.1- μ m以下CMOS器件性能的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257933

D. Lenoble, P. Prod'homme, D. Beutier, C. Julien

引用次数: 2

Accurate TEM measurements of the injection distances in nanocrystal based memories 纳米晶基记忆体中注射距离的精确透射电镜测量

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258089

A. Carrada, B. Assayag, C. Bonafos, A. Claverie, P. Normand, D. Tsoukalas

引用次数: 0

Low energy implant throughput improvement by using the Arsenic dimer ion (As2+) on the Axcelis GSDIII/LED ion implanter 利用砷二聚体离子(As2+)改善Axcelis GSDIII/LED离子注入器的低能量注入通量

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257954

P. Kopalidis, C. Sohl, B. Freer, M. Arneen, R. Reece, M. Rathmell

引用次数: 2

Nanometer-scale silicide structures formed by focused ion-beam implantation 聚焦离子束注入形成的纳米级硅化物结构

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258096

T. Alford, M. Mitan, J. Mayer

{"title":"Nanometer-scale silicide structures formed by focused ion-beam implantation","authors":"T. Alford, M. Mitan, J. Mayer","doi":"10.1109/IIT.2002.1258096","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258096","url":null,"abstract":"We have demonstrated a new technique for direct patterning and formation of cobalt silicide structures using focused ion beam implantation. This mask-free-fabrication technique takes advantage of the influence on the kinetics of ion-beam mixing and properties of thin barrier oxides during silicide line formation. Silicide structures with dimensions of the order of 170 nm were produced on (100) silicon substrates. The process involves the ion implantation of 200 keV As++ through a thin cobalt film on SiO2/Si structure. A selective reaction barrier at the Si/Co interface comprising of a thin (∼2 nm) oxide (SiO2), prevents unwanted reactions with silicon. Ion-beam mixing was instrumental in fracturing of the oxide layer; thereby, allowing the migration of metal atoms across the Si/Co boundary for the silicidation reaction to proceed during subsequent rapid thermal anneal treatments. Diffusion controlled reactions advanced rapidly in the implanted areas, requiring a two-step anneal sequence to inhibit reaction elsewhere. A threshold dose of 3 × 1015 cm-2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Resistivity obtained ranged on the order of 12 to 23 μΩ-cm. Application of this method can facilitate a wide variety of silicide structures.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130786201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

An effective electrical isolation scheme by iron implantation at different substrate temperatures 在不同的衬底温度下，铁注入是一种有效的电隔离方案

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258079

P. Too, S. Ahmed, B. Sealy, R. Gwilliam

{"title":"An effective electrical isolation scheme by iron implantation at different substrate temperatures","authors":"P. Too, S. Ahmed, B. Sealy, R. Gwilliam","doi":"10.1109/IIT.2002.1258079","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258079","url":null,"abstract":"High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100/spl deg/C and 200/spl deg/C was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 /spl times/ 10/sup 14/ /cm/sup 2/. This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R/sub s/), sheet carrier concentration (n/sub s/) and sheet mobility (/spl mu/) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800/spl deg/C). Samples implanted at 77K, RT and 100/spl deg/C show more or less the same trend of post-implant annealing characteristics. A maximum sheet resistivity of /spl sim/1/spl times/10/sup 7/ /spl Omega///spl square/ was achieved for samples implanted at 77K, RT and 100/spl deg/C after annealing at 400/spl deg/C. A lower resistivity of /spl sim/1/spl times/10/sup 6/ /spl Omega///spl square/ was obtained for a 200/spl deg/C implant after annealing at 400/spl deg/C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200/spl deg/C substrate temperature, annealing above 400/spl deg/C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100/spl deg/C implant after annealing at 600/spl deg/C. We infer that for 77K, RT and 100/spl deg/C implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200/spl deg/C substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"45 16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131019198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Charge exchange and neutral transport contributions to energy contamination in decel mode, sub-keV ion implantation 电荷交换和中性输运对降速模式下亚质子注入能量污染的贡献

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257968

D. Armour, J. A. Van den Berg, G. Wostenholm, A. Al-Bayati, A. Murrell, R. Goldberg, E. Collart

{"title":"Charge exchange and neutral transport contributions to energy contamination in decel mode, sub-keV ion implantation","authors":"D. Armour, J. A. Van den Berg, G. Wostenholm, A. Al-Bayati, A. Murrell, R. Goldberg, E. Collart","doi":"10.1109/IIT.2002.1257968","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257968","url":null,"abstract":"The use of a deceleration lens close to the wafer to obtain high currents at sub-keV energies carries with it the risk of energy contamination. The extent to which this contamination affects the implant depth profile depends on a number of factors related both to hardware design and choice of deceleration conditions. While the beamline length and pressure have a linear effect on the extent of beam neutralization, the choice of pre-accel energy and the ratio of this energy to the final energy are also significant due to (a) the energy dependence of the charge exchange cross-sections and (b) the energy dependence of the probability that the fast neutrals formed in charge exchange collisions will reach the wafer. In this paper, measurements of the σ10 charge exchange cross-sections of B+ ions in argon, a common plasma flood feed gas, over the energy range from 200 eV to 10 keV, have been combined with beam trajectory calculations in the section of beamline between the magnet exit and the final section of the decel lens. By this means, the dependence of the energy contamination on the pre-accel energy was determined. The results have been compared with secondary ion mass spectrometry (SIMS) measurements of the high-energy neutral content of the relevant decelerated ion implants. The fact that good agreement can be obtained when appropriate currents are used in the beam trajectory calculations confirms the importance of a knowledge of both the charge exchange cross-sections and the neutral transport efficiency.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131021729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of the large current cluster ion beam technology 大电流簇离子束技术的发展

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258095

T. Seki, J. Matsuo, G. Takaoka

{"title":"Development of the large current cluster ion beam technology","authors":"T. Seki, J. Matsuo, G. Takaoka","doi":"10.1109/IIT.2002.1258095","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258095","url":null,"abstract":"A cluster is an aggregate of a few to several thousands atoms. Because many atoms constituting a cluster ion bombard a local area, high-density energy deposition and multiple-collision processes are realized. Because of the interactions, cluster ion beam processes can produce unusual new surface modification effects, such as surface smoothing, high rate sputtering and very shallow implantation. High ion dose is needed to realize the nano-level smoothing and etching of hard materials. It is necessary to develop the technology of large current cluster ion beam for the purpose of increasing the productivity of processing using cluster ion beam. In order to achieve large current cluster ion beam, the cluster generation, ionization and ion transportation were studied. The efficient cluster generation was realized by increase of source gas pressure. The mass distributions of Ar cluster beams generated from a Laval nozzle were measured with a Time-of-Flight (TOF). The distributions prove that the neutral beams include clusters with the size up to 160000 atoms. The efficient ionization and extraction were realized by structural improvement of the ionizer. The ionization efficiency increases with the emission current. When the emission current is 100mA, the ionization efficiency reaches about 80 %. The structural improvements of ionizer suppressed the loss of ions by coulomb repulsion and realized the extraction of large current cluster ion beams. As a result, when the gas pressure was 15000 Torr and the electron emission current is 300 mA, the beam current reached 500 μA. The cluster ion dose of more than 1×1016 ions/cm2 is needed to realize the nano-level smoothing. With this beam current, 6 inches wafers can be treated for about 10 minutes.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131313280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Energy contamination control during ion beam deceleration for low energy ion implantation 低能离子注入中离子束减速过程中的能量污染控制

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257978

Zhimin Wan Zhimin Wan, Jiong Chen Jiong Chen, D. Tang, Linuan Chen Linuan Chen

{"title":"Energy contamination control during ion beam deceleration for low energy ion implantation","authors":"Zhimin Wan Zhimin Wan, Jiong Chen Jiong Chen, D. Tang, Linuan Chen Linuan Chen","doi":"10.1109/IIT.2002.1257978","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257978","url":null,"abstract":"Ultra low energy ion implantation with high beam current is required for shallow junction formation. Due to space charge limits in low energy ion beam transport, it is necessary to extract ion beams at higher energy (>1 kV) and decelerate them to a target energy as low as 100 eV near the process wafers. Energy contamination due to energetic neutral particles that result from charge exchanges between beam ions and bean-dine residual gas molecules before and during deceleration, increases proportionally with beamline pressure and is difficult to be prevented without sacrificing beam currents substantially. AIBT has developed a method or energy contamination control. Both electrical and magnetic fields are applied to the deceleration region so that the energetic neutral particles created before and during beam deceleration are guided to neutral beam blockers instead of the wafers. The energy contamination is negligible though the beamline pressure is as high as 1E-4torr. This method maximizes beam current performance at ultra low energy and gives easy implant control since the beamline pressure does not affect energy contamination level in our system.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128163063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter 使用UI-6000植入机进行100mA O+植入的SIMOX晶圆制造

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258084

K. Tokiguchi, H. Seki, T. Seki, J. Itou, Y. Higuchi, K. Mera, Shoichiro Tanaka, Y. Yamashita, I. Hashimoto, A. Yoshikawa

引用次数: 0

Ultra-shallow implant anneal using single wafer rapid thermal furnace 单晶片快速热炉超浅植入退火

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257945

Woo Sik Yoo Woo Sik Yoo, N. Takahashi

引用次数: 0