K. Tokiguchi, H. Seki, T. Seki, J. Itou, Y. Higuchi, K. Mera, Shoichiro Tanaka, Y. Yamashita, I. Hashimoto, A. Yoshikawa
{"title":"使用UI-6000植入机进行100mA O+植入的SIMOX晶圆制造","authors":"K. Tokiguchi, H. Seki, T. Seki, J. Itou, Y. Higuchi, K. Mera, Shoichiro Tanaka, Y. Yamashita, I. Hashimoto, A. Yoshikawa","doi":"10.1109/IIT.2002.1258084","DOIUrl":null,"url":null,"abstract":"Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter\",\"authors\":\"K. Tokiguchi, H. Seki, T. Seki, J. Itou, Y. Higuchi, K. Mera, Shoichiro Tanaka, Y. Yamashita, I. Hashimoto, A. Yoshikawa\",\"doi\":\"10.1109/IIT.2002.1258084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.\",\"PeriodicalId\":305062,\"journal\":{\"name\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2002.1258084\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2002.1258084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter
Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.