利用砷二聚体离子(As2+)改善Axcelis GSDIII/LED离子注入器的低能量注入通量

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257954

P. Kopalidis, C. Sohl, B. Freer, M. Arneen, R. Reece, M. Rathmell

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引用次数: 2

摘要

在GSD/超高电流离子注入器上对用于形成超浅结的低能量砷注入物进行了表征。砷二聚体离子(As2+)在注入能量低于5 keV时具有显著的束流和工艺吞吐量优势。二聚体种植体只需要同等As种植体的一半剂量和两倍能量，从而显著减少种植时间。工艺结果包括热波(TW)，片电阻(Rs)和SIMS曲线显示As+和As2+植入物之间的等效性。

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Low energy implant throughput improvement by using the Arsenic dimer ion (As2+) on the Axcelis GSDIII/LED ion implanter

Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion (As₂⁺) for implant energies lower than 5 keV. Dimer implants require only half the dose and use twice the energy of equivalent As implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance (R_s) and SIMS profiles show equivalence between As⁺ and As₂⁺ implants.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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