{"title":"在不同的衬底温度下,铁注入是一种有效的电隔离方案","authors":"P. Too, S. Ahmed, B. Sealy, R. Gwilliam","doi":"10.1109/IIT.2002.1258079","DOIUrl":null,"url":null,"abstract":"High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100/spl deg/C and 200/spl deg/C was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 /spl times/ 10/sup 14/ /cm/sup 2/. This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R/sub s/), sheet carrier concentration (n/sub s/) and sheet mobility (/spl mu/) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800/spl deg/C). Samples implanted at 77K, RT and 100/spl deg/C show more or less the same trend of post-implant annealing characteristics. A maximum sheet resistivity of /spl sim/1/spl times/10/sup 7/ /spl Omega///spl square/ was achieved for samples implanted at 77K, RT and 100/spl deg/C after annealing at 400/spl deg/C. A lower resistivity of /spl sim/1/spl times/10/sup 6/ /spl Omega///spl square/ was obtained for a 200/spl deg/C implant after annealing at 400/spl deg/C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200/spl deg/C substrate temperature, annealing above 400/spl deg/C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100/spl deg/C implant after annealing at 600/spl deg/C. We infer that for 77K, RT and 100/spl deg/C implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200/spl deg/C substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"45 16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An effective electrical isolation scheme by iron implantation at different substrate temperatures\",\"authors\":\"P. Too, S. Ahmed, B. Sealy, R. Gwilliam\",\"doi\":\"10.1109/IIT.2002.1258079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100/spl deg/C and 200/spl deg/C was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 /spl times/ 10/sup 14/ /cm/sup 2/. This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R/sub s/), sheet carrier concentration (n/sub s/) and sheet mobility (/spl mu/) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800/spl deg/C). Samples implanted at 77K, RT and 100/spl deg/C show more or less the same trend of post-implant annealing characteristics. A maximum sheet resistivity of /spl sim/1/spl times/10/sup 7/ /spl Omega///spl square/ was achieved for samples implanted at 77K, RT and 100/spl deg/C after annealing at 400/spl deg/C. A lower resistivity of /spl sim/1/spl times/10/sup 6/ /spl Omega///spl square/ was obtained for a 200/spl deg/C implant after annealing at 400/spl deg/C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200/spl deg/C substrate temperature, annealing above 400/spl deg/C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100/spl deg/C implant after annealing at 600/spl deg/C. We infer that for 77K, RT and 100/spl deg/C implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200/spl deg/C substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.\",\"PeriodicalId\":305062,\"journal\":{\"name\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"volume\":\"45 16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2002.1258079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2002.1258079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An effective electrical isolation scheme by iron implantation at different substrate temperatures
High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100/spl deg/C and 200/spl deg/C was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 /spl times/ 10/sup 14/ /cm/sup 2/. This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R/sub s/), sheet carrier concentration (n/sub s/) and sheet mobility (/spl mu/) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800/spl deg/C). Samples implanted at 77K, RT and 100/spl deg/C show more or less the same trend of post-implant annealing characteristics. A maximum sheet resistivity of /spl sim/1/spl times/10/sup 7/ /spl Omega///spl square/ was achieved for samples implanted at 77K, RT and 100/spl deg/C after annealing at 400/spl deg/C. A lower resistivity of /spl sim/1/spl times/10/sup 6/ /spl Omega///spl square/ was obtained for a 200/spl deg/C implant after annealing at 400/spl deg/C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200/spl deg/C substrate temperature, annealing above 400/spl deg/C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100/spl deg/C implant after annealing at 600/spl deg/C. We infer that for 77K, RT and 100/spl deg/C implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200/spl deg/C substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.