SIMOX wafer fabrication by 100mA O+ implantation using the UI-6000 implanter

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1258084

K. Tokiguchi, H. Seki, T. Seki, J. Itou, Y. Higuchi, K. Mera, Shoichiro Tanaka, Y. Yamashita, I. Hashimoto, A. Yoshikawa

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Abstract

Implant characteristics of SIMOX implanter UI-6000 were investigated under the condition of a 100mA-class O+ beam current. Operation data of the UI-6000 showed that the mass-analyzed 100mA O+ implantation can be effectively applied to high quality SIMOX-SOI wafer fabrication.

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使用UI-6000植入机进行100mA O+植入的SIMOX晶圆制造

研究了SIMOX种植机UI-6000在100ma级O+束流条件下的种植特性。UI-6000的运行数据表明，质量分析的100mA O+注入可以有效地应用于高质量的SIMOX-SOI晶圆制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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