Ultra-shallow implant anneal using single wafer rapid thermal furnace

Abstract

A new RTA approach using a single wafer type furnace which provides wafer temperature profiles equivalent to the ones achieved from the conventional lamp-based RTA systems is introduced. The single wafer rapid thermal furnace (SRTF) allows short time annealing in a nearly isothermal furnace environment. In this paper, 11B+ and 49BF2+ shallow and ultra-shallow implanted wafers (1 keV∼30 keV) were annealed using the SRTF system to investigate electrical activation efficiency as well as B diffusion during annealing.