Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第2页

Charging on resist-patterned wafers during high-current ion implants 在大电流离子植入过程中对电阻图案晶片进行充电

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257975

W. Lukaszek, S. Daryanani, J. Shields

{"title":"Charging on resist-patterned wafers during high-current ion implants","authors":"W. Lukaszek, S. Daryanani, J. Shields","doi":"10.1109/IIT.2002.1257975","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257975","url":null,"abstract":"Charging characteristics of As+ and BF2+ high-current ion implants were measured using bare and resist-covered CHARM®-2 wafers patterned with a six-field mask containing holes ranging from 2 μm to 0.5 μm (as well as clear and resist-covered fields). The results show surprising differences in the charging characteristics of high-current ion implanters compared to contemporary plasma-based process tools. In plasma tools, the electron-shading\"\" effects increase positive (and decrease negative) potentials and current densities as hole size decreases. On the contrary, high-current ion implants exhibited positive and negative potentials independent of hole size. The positive and negative current densities were also independent of hole size (but significantly higher than in the clear field). These results indicate that charging damage in high-current ion implanters should not increase when implant mask features are scaled down (other factors being equal). We also explain the apparent absence of damage in contemporary high-current ion implanters in spite of the very high positive current densities and high positive potentials.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122542929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optical properties and applications of heavily Fe implanted InP 重铁注入InP的光学性质及应用

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258090

T. Cesca, A. Gasparotto, B. Fraboni, F. Priolo, E. C. Moreira, G. Scamarcio

引用次数: 1

Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels SRP和SIMS对低于0.1 μ m逆行通道的铟活化研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257930

A. Suvkhanov, M. Mirabedini, V. Hornback

引用次数: 0

Development of DC-PFG for a large size ion beam in ion doping system 离子掺杂系统中大尺寸离子束直流pfg的研制

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258001

S. Maeno, Y. Ando, Y. Inouchi, H. Tanaka, M. Naito

引用次数: 0

Elemental analysis of residual deposits in an ion implanter using IBA techniques 离子注入器中残余沉积物的元素分析

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258042

J. Mefo, K. Kirkby, B. Sealy, G. Boudreault, C. Jeynes, E.J.H. Collart

{"title":"Elemental analysis of residual deposits in an ion implanter using IBA techniques","authors":"J. Mefo, K. Kirkby, B. Sealy, G. Boudreault, C. Jeynes, E.J.H. Collart","doi":"10.1109/IIT.2002.1258042","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258042","url":null,"abstract":"Fluorinated species are now widely used as source gases in advanced ion implantation systems because of their controllability and relative ease of operation. The extreme reactivity of fluorine can have a deleterious effect on the source and extraction region, leading to the formation of deposits, which in turn can either directly or indirectly compromise the performance of the source. Little is known, however, about the composition of these deposits and the mechanisms by which they are formed. It is for this reason that this study was undertaken. Similar effects are not observed for hydrogenated species such as arsine and phosphine. In this work, BF3 was used as the source gas. The behaviour of the source was monitored, during 25 hours of operation. The deposits resulting from extracting an ion beam were studied using a range of ion beam analysis techniques in conjunction with Scanning Electron Microscopy. It was found that the deposits have a matrix of carbon and the two sides of the deposits show different elemental profiles (W, As, Fe, In, Sb, As), reflecting both the history of the ion implanter and the way in which the deposits were formed.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129693103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optimisation of large beam mass analysis 大梁质量分析的优化

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258037

D. Aitken

引用次数: 1

Ion implant requirements for high volume DRAM manufacturing 大批量DRAM制造的离子植入要求

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257962

A. Stuber, Soo-Chul Jang Soo-Chul Jang, Wang-Kuen Kim Wang-Kuen Kim

引用次数: 2

Molecular n-type dopant implants 分子n型掺杂植入物

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257953

A. Agarwal, B. Stevenson, M. Ameen, B. Freer, J. Poate

引用次数: 3

Implanted-ion dose variation from Si surface status of sub-nm scale on 90 nm ULSI process 90 nm超细硅工艺中亚纳米尺度硅表面状态注入离子剂量的变化

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257931

M. Kase, T. Kubo, Keiji Watanabe, K. Okabe, H. Nakao

引用次数: 1

Optimizing implanter vacuum performance with various cassette materials 优化各种卡带材料的真空度

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258054

M. Evans, J. O’Neil, B. Komma

引用次数: 0