Optimisation of large beam mass analysis

Abstract

A large beam mass analysis system for both the high current implant of wafers over a very wide energy range (100 eV-100 keV) and/or the implant of large substrates (up to 1 metre) is described. The advantages of the sextupole geometry for the prevention of light ion beam reflection and the intrinsic insensitivity of this technique to beam quality are emphasised.