SRP和SIMS对低于0.1 μ m逆行通道的铟活化研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257930

A. Suvkhanov, M. Mirabedini, V. Hornback

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引用次数: 0

摘要

本研究通过对植入硅片的SRP、SIMS和C-V测量来考察退火条件对受体活化的影响。在相对较低的温度下，较短的RTP退火提供了由Rs测量确定的较高的铟活化水平。研究了In+B和B+In注入顺序对掺杂分布的影响。In+B注入序列比B+In注入序列产生更浅的轮廓。说明铟的注入为硼的注入提供了有效的预非晶化条件。获得了其中一些条件下的设备数据，并严格审查了RTP退火对设备性能的影响。

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Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels

SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of acceptors. Shorter RTP annealing at relatively low temperatures provided higher Indium activation levels as determined by Rs measurements. The influence of the implantation sequence (In+B and B+In) on the dopant distribution was also investigated. The In+B implantation sequence yielded shallower profiles than the B+In implantation. It can be suggested that Indium implantation provides efficient pre-amorphization condition for Boron implantation. Device data for some of these conditions were obtained and the influence of RTP anneal on device performance was critically reviewed.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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