Ion implant requirements for high volume DRAM manufacturing

Abstract

Samsung sees Ion Implant technologies as a core competency, i.e. it can only negatively impact device performance or fab productivity. Ion Implant is not viewed as a technology driver for mainstream DRAM devices, like Photolithography and the Plasma Etch technologies. As a leader in the very competitive worldwide Memory market, Samsung utilizes proven implant processes whenever possible. All current memory products utilize a twin retrograde well process. The implant requirements for 0.15 to 0.10 micron DRAM products can easily be met by equipment from any of the major Ion Implant equipment suppliers. The differentiator between any of the implant tools from Samsung's perspective is tool uptime, productivity, and reliability. Samsung has a number of internal and external processes to continuously improve these items. This paper will discuss some of the Samsung ion implant requirements and future trends.