Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第3页

Effect of implant temperature on electrical characteristics of implanted monocrystalline-emitter bipolar transistors 植入温度对植入单晶发射极双极晶体管电特性的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257959

V. Sargūnas, P. Thiefain, A. Singh, S. Taduri, S. Melosky

引用次数: 1

In-line/in-situ doping monitoring facility using ion beams at Alabama A&M University 阿拉巴马A&M大学使用离子束的在线/原位掺杂监测设施

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258014

C. Muntele, I. Muntele, D. Ila, L. Holland, R. Zimmerman, D. Nisen, M. Schilloff

引用次数: 0

An effective scheme for the application of a life safety system for the entire ion implant module 为整个离子注入模块的生命安全系统的应用提供了一种有效的方案

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258047

N. Rivera, M. Sherrett, J. Mayer

引用次数: 0

Process performance of the ULVAC IW-630 200/300mm implanter ULVAC IW-630 200/300mm种植机的工艺性能

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258048

T. Rhoad, B. Lovelace, H. Suzuki, K. Niikura, T. McLaughlin

引用次数: 0

Developments in the abatement of ion implant process effluents 离子注入工艺废水治理研究进展

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258046

J. Arno, J. Sweeney, Paul J. Marganski, B. Kingston, S. Roberge, M. C. Dolan

{"title":"Developments in the abatement of ion implant process effluents","authors":"J. Arno, J. Sweeney, Paul J. Marganski, B. Kingston, S. Roberge, M. C. Dolan","doi":"10.1109/IIT.2002.1258046","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258046","url":null,"abstract":"The toxic and reactive nature of the materials utilized during ion implantation generates safety and environmental challenges. Recent introduction of reduced-pressure gas sources alleviated many concerns associated with delivering dopant species into the tool. However, materials not implanted onto wafers are instantly exhausted from the tool through roughing pumps or accumulated and later discharged using cryo pumps. Both pumps contribute ballast or carrier gas flows (typically nitrogen) resulting in tool effluent streams containing low concentrations of hydride and/or acid species. Due to their toxicity, point-of-use abatement methods are recommended in order to minimize the risk of human exposure or release into the environment. Chemisorption-based technologies are the method of choice for the removal of highly toxic materials to levels below threshold values. This paper describes recent developments related to the performance of an integrated zero footprint dry scrubber. Individual scrubber canisters were installed at the exhaust of roughing and cryo-pumps of an Axcelis GSD-VHE tool at Axcelis Technologies Inc. (Beverly, MA, USA). The abatement efficiencies and pressure drops of the abatement tools were characterized during implantation of common dopant species and cryo-regeneration. Highly sensitive hydride and acid sensors were used to monitor the exhausts of the abatement devices while scrubber inlet concentrations were analyzed using FT-IR techniques. Comparison of inlet and outlet concentrations provided information about the effectiveness of the scrubber. Pressure drop information was collected during chamber pumpdown, implantation, and cryo-regeneration. Pressure-drop and scrubbing efficiency will be periodically examined to validate long term operation of the abatement device.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115324580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma doping junction depth measurement using Therma-Probe system 用热探针系统测量等离子体掺杂结深度

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257980

Bon-Woong Koo Bon-Woong Koo, Ziwei Fang Ziwei Fang, M. Bakshi, L. Nicolaides, S. Cherekdjian

引用次数: 0

The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing 预退火条件对Ge+注入Si高温毫秒闪蒸退火后微观结构的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257942

K. Jones, S. Crane, C. E. Ross, T. Malmborg, D. Downey, E. Arevalo

{"title":"The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing","authors":"K. Jones, S. Crane, C. E. Ross, T. Malmborg, D. Downey, E. Arevalo","doi":"10.1109/IIT.2002.1257942","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257942","url":null,"abstract":"The effect of the pre-anneal conditions on the final defect microstructure after flash annealing of Ge implanted Si is investigated using transmission electron microscopy. (100) Si wafers were implanted with 30keV Ge+ implant at a dose of 1 × 1015/cm2 followed by a 500eV B implant at a dose of 1 × 1015/cm2. The germanium implant produces an amorphous layer 480Å thick and the boron implant is completely contained within the amorphous layer. The wafer was subsequently subjected to an impulse anneal at ramp rates between 50°C/sec and 400°C/sec to temperatures between 700 and 900°C followed by a flash anneal to temperatures between 1100°C and 1300°C. The flash anneal occurred over a microsecond time scale so the ramp rates and the cooling rates are estimated to be 106°C/sec. It was found that the ramp rate and temperature of the impulse pre-anneal has a remarkable effect on the final microstructure and sheet resistance of the implant. For the 760°C pre-anneal impulse temperature, followed by a 1300°C flash, decreasing the ramp rate of the impulse anneal from 400°C/sec to 50°C/sec increases the end of range defect density by 270% while the sheet resistance increased from 613 to 704 ohms/square. As the impulse temperature is increased the effects of the impulse ramp rate appear to decrease. The changes in the electrical and microstructural properties of the Si imply that the relatively low temperature impulse conditions play an increasingly important role as the high temperature flash anneals become shorter.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115614712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Recessed junction and low energy n-junction implantation characteristics 凹结和低能n结注入特性

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257947

B. C. Lee, J. Yoo, D. Lee, C. S. Kim, S. M. Kim, S. Choi, U. Chung, J. Moon

引用次数: 0

Increasing B+ current from a microwave ion source by simultaneously utilizing new techniques 同时利用新技术增加微波离子源的B+电流

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258026

N. Sakudo, Yoshiaki Tazaki, M. Matsumine, Y. Tamashiro, R. Nishimoto, H. Ito, M. Takahashi, Y. Matsunaga

引用次数: 1

High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si Si中超浅As植入物损伤和退火行为的高深度分辨率表征

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258076

J. A. Van den Berg, D. Armour, M. Werner, S. Whelan, W. Vandervorst, T. Clarysse, E. Collart, R. Goldberg, P. Bailey, T. Noakes

{"title":"High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si","authors":"J. A. Van den Berg, D. Armour, M. Werner, S. Whelan, W. Vandervorst, T. Clarysse, E. Collart, R. Goldberg, P. Bailey, T. Noakes","doi":"10.1109/IIT.2002.1258076","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258076","url":null,"abstract":"The relationship between damage formation/annealing and As profile redistribution has been studied using low energy As implants into Si at 2.5 keV at doses between 3 × 1013 cm-2 and 2 × 1015 cm-2 at room temperature. Samples were annealed at temperatures between 600 and 1050°C. High depth resolution medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS) were used to characterise the damage build up and As profiles as a function of implant dose and anneal temperature. MEIS studies showed that damage does not accumulate according to the energy deposition function but proceeds from the surface inwards. This is ascribed to the accumulation of collision cascade produced interstitials that are attracted to and settle at initially the oxide/Si interface and later to the advancing amorphous/crystalline interface. Dopant depth profiles agreed well with TRIM calculations for doses ≥ 4 × 1014 cm-2. However, for lower doses the dopant was observed to have a profile nearer to the surface, due to trapping in the narrow surface damaged layer, in which it is more easily accommodated. Following epitaxial regrowth at 700°C, MEIS showed that -50 % of the As has moved into substitutional sites, consistent with activation and/or the formation of inactive AsnV clusters (n ≤ 4), while the remainder had segregated to and become trapped in a ≤1 nm wide layer, clearly located on the Si side of the oxide/Si interface. Very low energy SIMS analysis at normal incidence is able to resolve these ultra shallow peaks, including the As pileup following epitaxial regrowth. They also confirmed that As retention was complete during dose build up and annealing.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123996869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0