植入温度对植入单晶发射极双极晶体管电特性的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI:10.1109/IIT.2002.1257959

V. Sargūnas, P. Thiefain, A. Singh, S. Taduri, S. Melosky

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引用次数: 1

摘要

由于冷却减少导致的磁碟温度升高，对植入单晶发射极晶体管的增益有很大的影响。观察到的变化相当显著，导致产品在温度低于通常导致抗起泡的温度下超出公差条件。提出了观察到的现象的机理，基于降低的TED和非晶化剂量在高温下的变化。提供了As+在植入和退火后的SIMS曲线。强调了窄基植入单晶发射极双极晶体管精确温度控制的重要性，并提出了工艺控制技术。

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Effect of implant temperature on electrical characteristics of implanted monocrystalline-emitter bipolar transistors

Strong effect on the gain of implanted monocrystalline emitter transistor was seen due to a disk temperature increase caused by reduced cooling. Observed changes were quite significant, causing product out of tolerance condition at temperatures below the ones normally causing resist blistering. The mechanism for the observed phenomena is proposed, based upon reduced TED and change in amorphization dose at elevated temperature. SIMS profiles of As+ after implant and anneal are provided. The importance of precise temperature control for a narrow base implanted monocrystalline emitter bipolar transistor is highlighted and process control techniques are proposed.

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

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