Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on最新文献_第4页

USJ process requirements on low energy doping and spike anneal for production for 90 nm node CMOS LOGIC 90nm节点CMOS LOGIC生产中低能量掺杂和尖峰退火的USJ工艺要求

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257963

H. Nakao, Y. Momiyama, M. Kase, H. Ito, Y. Matsunaga

引用次数: 0

Effects of carbon content and annealing conditions, on the electrical activation of indium implanted silicon 碳含量和退火条件对铟注入硅电活化的影响

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258064

S. Gennaro, B. Sealy, C. Jeynes, R. Gwilliam, E. Collart, A. Licciardello

{"title":"Effects of carbon content and annealing conditions, on the electrical activation of indium implanted silicon","authors":"S. Gennaro, B. Sealy, C. Jeynes, R. Gwilliam, E. Collart, A. Licciardello","doi":"10.1109/IIT.2002.1258064","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258064","url":null,"abstract":"Several sets of lightly n-doped silicon wafers were implanted with indium at an energy of 70 keV and a dose. of 5.8 × 1014 cm-2. Carbon was subsequently co-implanted with an energy of 13.5 keV at doses ranging from 0 to 2.22×1015 cm-2 to achieve a carbon distribution overlapping the indium one with ratio of peak concentration ranging from 0 to 2. The samples were annealed at temperatures of 650 to 1100°C for times between 0 dwell and 1 hour in flowing N2. Following annealing electrical characterization of the samples was performed via four-point probe and Hall effect measurements to achieve information about sheet resistance (ρs), Hall mobility and sheet carrier concentration (NS). The retained dose and lattice site location of the In have been investigated using Rutherford backscattering spectrometry (RBS). Secondary Ion Mass Spectroscopy (SIMS) was performed to measure the atomic doping profiles in the samples. The results show that the electrical activation of the layer increases with increasing carbon concentration. Increasing the annealing temperature and/or time results in a deactivation of the implant.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128633579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Particle reduction strategies for high current-high volume manufacturing 大电流大批量制造的粒子减少策略

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258003

T. Beatty, P. Hatch, R. Santiesteban, S. Taduri, B. Krantz, S. Melosky, D. Marshall, M. Ameen

引用次数: 0

Evaluation of a novel antimony source delivered as vapor from an implanter gas box 一种新型锑源的评价，作为蒸汽从植入气体箱中输送

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258041

B. Isaacs, D. R. Seekon, D. Newman

引用次数: 0

Electrical behaviour of arsenic implanted silicon wafers at large tilt angle 砷注入硅片在大倾角下的电学行为

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258080

G. Claudio, C. Jeynes, K. Kirkby, B. Sealy, R. Gwilliam, R. Low

{"title":"Electrical behaviour of arsenic implanted silicon wafers at large tilt angle","authors":"G. Claudio, C. Jeynes, K. Kirkby, B. Sealy, R. Gwilliam, R. Low","doi":"10.1109/IIT.2002.1258080","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258080","url":null,"abstract":"Two sets of silicon wafers were implanted with 60 keV arsenic ions at a dose of 5×1015 cm-2, using an Applied Materials SWIFT implanter. The first batch consisted of five silicon pre-amorphised wafers, whilst the second batch was implanted under the same conditions into <100> single crystal wafers. The tilt angle was varied over the range 0° - 45°. After implantation the samples were cut into smaller pieces and annealed in the range 800 to 1000°C for times up to 60 seconds in flowing nitrogen. Van der Pauw measurements of the Hall effect and resistivity were made to obtain values of the sheet resistance (RS), Hall mobility (μH) and sheet carrier concentration (NS) as a function of the tilt angle. Electrical profiles were obtained from differential Hall effect measurements, whilst the retained dose was determined by Rutherford Back Scattering (RBS). The results show that the sheet resistance and the sheet carrier concentration are a function of the tilt angle and that preamorphisation results in a higher degree of electrical activation. A comparison of atomic and carrier concentration profiles as a function of tilt angle in conjunction with simulations are used to explain the observed results.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128814537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gauge 稳定离子计在Axcelis GSD植入物中的剂量再现性

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258012

R. C. Johnson, R. Tysinger

{"title":"Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gauge","authors":"R. C. Johnson, R. Tysinger","doi":"10.1109/IIT.2002.1258012","DOIUrl":"https://doi.org/10.1109/IIT.2002.1258012","url":null,"abstract":"Long-term dose reproducibility and tool to tool dose matching in the Axcelis GSD end-station is critically dependent on process chamber pressure measurement and Pressure Compensation factor selection. Pressure Compensation factor (PCOMP) determination is well established. Pressure measurement in the GSD end-station depends on accurate, repeatable gauge capability: incorrect pressure measurements directly lead to dose errors. For example, the dose equation using PCOMP tells us that for a modest PCOMP value of 30%, a chamber pressure measurement error of 2E-5 torr can result in a dose error up to 6% at normal process pressures. The original HCIG used for pressure measurement was not capable of meeting the requirements for good dose control since gauge to gauge differences were not controlled and gauge accuracy was only on the order of 25%. Axcelis introduced the Granville-Phillips 360 Stabil-Ion gauge to improve dose reproducibility through much improved gauge to gauge matching (+/-6%) and more accurate gauge output. This paper discusses the details of the care and feeding of the Stabil-Ion gauge system and its impact on process dose and process trends.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125428845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accurate characterization of dose and shape of ultra low energy arsenic (1keV and 2keV) implants by SIMS 利用SIMS精确表征超低能砷(1keV和2keV)植入物的剂量和形状

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1257984

S. Biswas, C. Mulcahy, P. Banks, E. Collart

{"title":"Accurate characterization of dose and shape of ultra low energy arsenic (1keV and 2keV) implants by SIMS","authors":"S. Biswas, C. Mulcahy, P. Banks, E. Collart","doi":"10.1109/IIT.2002.1257984","DOIUrl":"https://doi.org/10.1109/IIT.2002.1257984","url":null,"abstract":"During the past two to three years there have been several papers published on how to accurately measure the dose and shape of ultra low energy boron implants using Secondary Ion Mass Spectrometry (SIMS). In general, oxygen primary ion beam bombardment has been employed either using oxygen leak and 45° bombardment angle or normal incidence bombardment without oxygen leak. These methodologies have been employed to avoid problems from the pre-equilibrium issues encountered during SIMS measurements. The accurate dose and profile shape of ultra low energy arsenic implants unfortunately cannot employ the methodologies established for low energy boron measurements, due to the fact that arsenic segregates to the front or the oxygen beam when sputtering employing an oxygen ion beam and therefore the true shape of the arsenic implant profile can not be established. In this paper, we employ Cesium primary ion beam bombardment using various sub-keV energies, various angles of bombardment and normalisation routines to establish the true shape and dose of 1 keV and 2 keV arsenic implants. The normalization or the arsenic profile to various silicon isotopes and combinations of its dimers are considered along with low temperature Chemical Vapour Deposited (CVD) silicon capped 1 keV and 2 keV arsenic implants. This is employed to avoid the pre-equilibrium transients in the SIMS profile of the arsenic at the surface of the silicon. The results lead to a methodology for obtaining the correct arsenic implanted dose and the correct arsenic implant shape using specific normalisation routines. The arsenic doses calculated from SIMS have been compared with Rutherford Backscattering (RBS) measured dose values.","PeriodicalId":305062,"journal":{"name":"Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126230983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Report on in-situ antimony fluoride generation for ion implant processes 离子注入过程中原位生成氟化锑的研究报告

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258038

J. Arno

引用次数: 0

Raman and FTIR studies on nanostructure formation on silicon carbide 碳化硅纳米结构形成的拉曼光谱和红外光谱研究

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258105

I. Muntele, C. Muntele, D. Ila, D. Poker, D. Hensley

引用次数: 0

Boron diffusion in Si1-xGex alloy layers 硼在Si1-xGex合金层中的扩散

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Pub Date : 1900-01-01 DOI: 10.1109/IIT.2002.1258101

N. Ohno

引用次数: 0