USJ process requirements on low energy doping and spike anneal for production for 90 nm node CMOS LOGIC

Abstract

Ultra Shallow Junction (USJ) for Source Drain Extension (SDE) required from ITRS road map becomes shallower toward sub 10 nm beyond 90-nm node. The 45 nm node USJ for n-MOS was first demonstrated using heavy mass dopant of Antimony. In p-MOS case, by examining the pre-acceleration energy dependence of device performance in differential mode implant, we showed deep sub-keV energy contamination less high current implanter is necessary for high-end n-MOS beyond 90-nm node.